Separate magnetization switching of hexagonal Co/BN/Co junctions grown epitaxially on c-sapphire

Alexander A. Tonkikh; Peter Werner

Separate magnetization switching of hexagonal Co/BN/Co junctions grown epitaxially on c-sapphire

Materials Science 2017-01-10 v1

Authors: Alexander A. Tonkikh , Peter Werner

Abstract

Magnetic tunnel junctions (MTJ) have been grown by using molecular beam epitaxy on c-plane Al2O3 substrates. The MTJ stacks consist of two ferromagnetic hcp-Co layers separated by a thin insulating h-BN barrier. The samples have been grown in a single run revealing single crystalline epitaxial structures with sharp interfaces as observed by applying transmission electron microscopy. The in-plane magnetization experiments have revealed separate magnetization switching of a thin top Co (soft) layer and a thick bottom Co (hard) layer. At zero magnetic field the two Co layers are found in an antiparallel state.

Keywords

magnetic tunnel junctions magnetic topology

Cite

@article{arxiv.1701.02027,
  title  = {Separate magnetization switching of hexagonal Co/BN/Co junctions grown epitaxially on c-sapphire},
  author = {Alexander A. Tonkikh and Peter Werner},
  journal= {arXiv preprint arXiv:1701.02027},
  year   = {2017}
}

Comments

5 pages, 4 figures, 22 references

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