Tunneling in double barrier junctions with 'hot spots'

D. Herranz; F. G. Aliev; C. Tiusan; M. Hehn; V. K. Dugaev; J. Barnas

doi:10.1103/PhysRevLett.105.047207

Tunneling in double barrier junctions with 'hot spots'

Mesoscale and Nanoscale Physics 2012-04-27 v1

Authors: D. Herranz , F. G. Aliev , C. Tiusan , M. Hehn , V. K. Dugaev , J. Barnas

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Abstract

We investigate electronic transport in epitaxial Fe(100)/MgO/Fe/MgO/Fe double magnetic tunnel junctions with soft barrier breakdown (hot spots). Specificity of these junctions are continious middle layer and Nitrogen doping of the MgO barriers which provides soft breakdown at biases about 0.5V. In the junctions with hot spots we observe quasi-periodic changes in the resistance as a function of bias voltage which point out formation of quantum well states in the middle Fe continuous free layer. The room-temperature oscillations have been observed in both parallel and antiparallel magnetic configurations and for both bias polarizations. A simple model of tunneling through hot spots in the double barrier magnetic junction is proposed to explain qualitatively this effect.

Keywords

magnetic tunnel junctions superconducting tunnel junctions quantum wells

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@article{arxiv.1204.5851,
  title  = {Tunneling in double barrier junctions with 'hot spots'},
  author = {D. Herranz and F. G. Aliev and C. Tiusan and M. Hehn and V. K. Dugaev and J. Barnas},
  journal= {arXiv preprint arXiv:1204.5851},
  year   = {2012}
}

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11 pages, 4 figures

Tunneling in double barrier junctions with 'hot spots'

Abstract

Keywords

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