Related papers: Complementary Resistive Switching in Tantalum Oxid…

Transition metal oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating power, endurance, speed, and density. Their commercial…

Multiferroic tunnel junctions (MFTJs) have already been proved to be promising candidates for application in spintronics devices. The coupling between tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) in MFTJs can provide…

The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon…

Resistive random access memory (ReRAM) is a promising emerging non-volatile memory (NVM) technology that shows high potential for both data storage and computing. However, its crossbar array architecture leads to the sneak path problem,…

We have proposed a kind of nonvolatile resistive switching memory based on amorphous LaLuO3, which has already been established as a promising candidate of high-k gate dielectric employed in transistors. Well-developed unipolar switching…

We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…

A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…

The maximum achievable rate is derived for resistive random-access memory (ReRAM) channel with sneak path interference. Based on the mutual information spectrum analysis, the maximum achievable rate of ReRAM channel with independent and…

We propose an optical memory cell based on ultrafast wavelength switching in coupled-cavity microlasers, featuring bistability between modes separated by several nanometers. A numerical implementation is demonstrated by simulating a…

The increasing computational demand of Convolutional Neural Networks (CNNs) necessitates energy-efficient acceleration strategies. Compute-in-Memory (CIM) architectures based on Resistive Random Access Memory (RRAM) offer a promising…

We have studied resistive bistability (memory) effects in junctions based on metal oxides, with a focus on sample-to-sample reproducibility which is necessary for the use of such junctions as crosspoint devices of hybrid CMOS/nanoelectronic…

Complementary Learning Systems (CLS) theory suggests that the brain uses a 'neocortical' and a 'hippocampal' learning system to achieve complex behavior. These two systems are complementary in that the 'neocortical' system relies on slow…

Computation-in-Memory (CiM) is attracting attention as a technology that can perform MAC calculations required for AI accelerators, at high speed with low power consumption. However, there is a problem regarding power consumption and…

Crossbar architectures have long been seen as a promising foundation for in-memory computing, using memristor arrays for high-density, energy-efficient analog computation. However, this conventional architecture suffers from a fundamental…

Deep learning-based recommendation models (DLRMs) are widely deployed in commercial applications to enhance user experience. However, the large and sparse embedding layers in these models impose substantial memory bandwidth bottlenecks due…

The control and manipulation of filamentary resistive switching (FRS) is essential for practical applications in fields like non-volatile memories and neuromorphic computing. However, key aspects of the dynamics of conductive filament…

The landscape of emerging applications has been continually widening, encompassing various data-intensive applications like artificial intelligence, machine learning, secure encryption, Internet-of-Things, etc. A sustainable approach toward…

Spin-Transfer Torque Magnetic RAM (STT-MRAM) as one of the most promising replacements for SRAMs in on-chip cache memories benefits from higher density and scalability, near-zero leakage power, and non-volatility, but its reliability is…

Artificial neural networks have become ubiquitous in modern life, which has triggered the emergence of a new class of application specific integrated circuits for their acceleration. ReRAM-based accelerators have gained significant traction…

Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here we employ a simple and scalable material system of conductive oxide…