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A new approach to designing FSS-based LP-CP converters is presented. It is based on the use of FSSs which exhibit dual diagonal symmetry, and a novel 4-port equivalent circuit able to describe the electrical behavior of the cells for the…
We propose an atomic quantum transistor based on exchange by virtual photons between two atomic systems through the control gate-atom. The quantum transistor is realized in two QED cavities coupled in nano-optical scheme. We have found…
The increase of energy in accelerators over the past decades has led to the design of superconducting magnets for both accelerators and the associated detectors. The use of Nb-Ti superconducting materials allows an increase in the dipole…
Time over dynamic threshold (TODT) method, proposed in our previous work, has been successfully used for nuclear pulse charge measurement in PET detectors. It has advantages of strict linearity, large dynamic range, and better energy…
Bose-condensation of mass-less quasiparticles (photons) can be easily achieved at the room temperature in lasers. On the other hand, condensation of bosons having a non-zero mass requires usually ultra-low temperatures. Recently, it has…
Two-dimensional (2D) mobile carriers are a wellspring of quantum phenomena. Among various 2D-carrier systems, such as field effect transistors and heterostructures, polar materials hold a unique potential; the spontaneous electric…
We report a nanoscale device concept based on a highly doped $\delta$-layer tunnel junction embedded in a semiconductor for charge sensing. Recent advances in Atomic Precision Advanced Manufacturing (APAM) processes have enabled the…
A theory of a pseudogap phase of high-temperature superconductors where current carriers are translation invariant bipolarons is developed. A temperature T* of a transition from a pseudogap phase to a normal one is calculated. For the…
Basic SiC bipolar transistors have been studied in the past for their applications where high power or high temperature operation is required. However since the current gain in SiC bipolar transistors is very low and therefore, a large base…
To elucidate a quantum phase transition (QPT) in Bi_2Sr_{2-x}La_xCuO_{6+\delta}, we measure charge and heat transport properties at very low temperatures and examine the following characteristics for a wide range of doping: normal-state…
We present results of first principle numerical simulations of the Bose one-component plasma, i.e., a Bose gas with pairwise Coulomb interactions among particles and a uniform neutralizing background. We compute the superconducting…
Transition Path Theory (TPT) provides a rigorous framework to investigate the dynamics of rare thermally activated transitions. In this theory, a central role is played by the forward committor function q^+(x), which provides the ideal…
We discuss the design and optimisation of two types of junctions between surface-electrode radiofrequency ion-trap arrays that enable the integration of experiments with sympathetically cooled molecular ions on a monolithic chip device. A…
Differential transformation (DT) method has shown to be promising for power system simulation in our recent works. This letter applies the DT method to nonlinear power flow equations and proves that the nonlinear power flow equations are…
We report synthesis and properties of superconducting Bi$_2$PdPt, a new member of Bi-Pd based compounds known for their simultaneous existence of topological surfaces states and superconductivity. It crystallizes in a hexagonal structure…
Scandium nitride (ScN) is a semiconducting transition metal nitride for which there are not identified dopants. We present local density functional calculations, in supercell approach, for ScN doped with O and C in N-sites and Ca and Ti in…
The equivalent electrical circuit of the Ebers-Moll type is introduced for magnetic bipolar transistors. In addition to conventional diodes and current sources, the new circuit comprises two novel elements due to spin-charge coupling. A…
Hydrogen resist lithography using the tip of a scanning tunneling microscope (STM) is employed for patterning p-type nanostructures in silicon. For this, the carrier density and mobility of boron $\delta$-layers, fabricated by gas-phase…
In recent years there has been a number of proposals of thermal devices operating in the near-field regime that make use of phase-transition materials. Here, we present a theoretical study of near-field thermal diodes and transistors that…
The response of electric devices to an applied thermal gradient has, so far, been studied almost exclusively in two-terminal devices. Here we present measurements of the response to a thermal bias of a four-terminal, quasi-ballistic…