Related papers: Bipolar Charge Plasma Transistor: A Novel Three Te…
A novel bipolar transistor structure, namely, a SiC emitter lateral NPM Schottky collector bipolar transistor (SCBT) with a silicon-on-insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. A comprehensive comparison…
Recent development in fabrication technology of planar two-dimensional (2D) materials has brought up possibilities of numerous novel applications. Our recent analysis has revealed that by definition of p-n junctions through appropriate…
Conventional silicon bipolars are not suitable for low-temperature operation due to the deterioration of current gain ($\beta$). In this paper, we characterize lateral bipolar junction transistors (LBJTs) fabricated on silicon-on-insulator…
Nano-electronic integrated circuit technology is exclusively based on MOSFET transistor due to its scalability down to the nanometer range. On the other hand, Bipolar Junction Transistor (BJT), which provides unmatched analog…
The concept of a magnetic bipolar transistor (MBT) is introduced. The transistor has at least one magnetic region (emitter, base, or collector) characterized by spin-splitting of the carrier bands. In addition, nonequilibrium (source) spin…
In this paper, we report an alternative approach of implementing a Schottky collector bipolar transistor without doping the ultrathin SOI film. Using different metal work function electrodes, the electrons and holes are induced in an…
We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides. The device is intrinsically thinner…
This work presents an original concept directed to implement an unconventional methodology where a device is produced by integrating a solid-state circuitry concept and an electrochemistry cell. In our experimental system an organic…
Charge transfer plasmon (CTP) modes arise when metallic nanoparticles are connected by a conductive junction. These ultatunable plasmonic modes can be actively tuned and broadly modulated from visible to IR regimes, implying their…
In this paper we report a new PNP Surface Accumulation Layer Transistor (SALTran) on SOI which uses the concept of surface accumulation of holes near the emitter contact to significantly improve the current gain. Using two-dimensional…
This work reports an approach to study complementary pairs of bipolar junction transistors, often used in push-pull circuits typically found at the output stages of operational amplifiers. After the data is acquired and pre-processed, an…
We theoretically study the quasiparticle current behaviour of a thermally-biased bipolar thermoelectrical superconducting quantum interference proximity transistor, formed by a normal metal wire embedded in a superconducting ring and…
Bipolar junction transistors (BJTs) have been at the core of linear electronics from its beginnings. Although their properties can be well represented transport model equations, design and analysis approaches have, to a good extent, been…
A very simple low cost bipolar transistor tester for physics lab is given. The proposed circuit not only indicates the type of transistor(NPN/PNP) but also indicates the terminals(emitter, base and collector) using simple dual color…
The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between…
Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their…
In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…
We demonstrate that a thermal transistor can be made up with a quantum system of 3 interacting subsystems , coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control…
Dynamical Phase transitions (DPTs) describe the abrupt change in the dynamical properties of open systems when a single control parameter is slightly modified. Recently we found that this phenomenon is also present in a simple model of a…
A new Schottky-gate Bipolar Mode Field Effect Transistor (SBMFET) is proposed and verified by two-dimensional simulation. Unlike in the case of conventional BMFET, which uses deep diffused p+-regions as the gate, the proposed device uses…