Related papers: Bipolar Charge Plasma Transistor: A Novel Three Te…

In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…

A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin. It is shown that electrical spin injection through the transistor is possible…

Here, we propose a Charge Plasma (CP)-based Germanium Double Gate Tunnel Field-Effect Transistor (Ge-DGTFET) device structure, where a CP is induced in the heavily doped source region using the work function engineering of source electrode.…

Tunable plasmonic resonances across the visible and near infrared spectra have provided novel ways to develop next-generation nanophotonic devices. In this study, by using optothermally controllable phase-changing material (PCM), we…

A novel design-friendly device called the transistor-injected dual doping quantum cascade laser (TI-D2QCL) with two different doping in each stack of a homogeneous superlattice is proposed. By adjusting the base-emitter bias Vbe of the…

In this paper we study the device physics of a technique for realizing an n-p-n bipolar transistor action in the source side of a junctionless nanowire tunneling FET (BJN-TFET). In the on-state, tunneling of electrons from valence band of…

The cuprates seem to exhibit statistics, dimensionality and phase transitions in novel ways. The nature of excitations [i.e. quasiparticle or collective], spin-charge separation, stripes [static and dynamics], inhomogeneities, psuedogap,…

Using calibrated simulations, we report a detailed study of the doping-less tunnel field effect transistor (TFET) on a thin intrinsic silicon film using charge plasma concept. Without the need for any doping, the source and drain regions…

Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a Single Atom Transistor (SAT). By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at…

p-type doping from the dielectric/semiconductor interface of a SnO2 thin film transistor (TFT) has been utilized to develop high carrier mobility balanced ambipolar oxide-transistor. To introduce this interfacial-doping, bottom-gate…

Here, we study the possibility of selective high-harmonic generation (HHG) based on the concept of charge transfer plasmons (CTP) in bridged nanoparticle assemblies. By choosing plasmonic dimer nanoantenna, as a fundamental member of…

The Cooper-pair transistor (CPT), a small superconducting island enclosed between two Josephson weak links, is the atomic building block of various superconducting quantum circuits. Utilizing gate-tunable semiconductor channels as weak…

Inducing an inversion layer in organic semiconductors is a highly nontrivial, but critical, achievement for producing organic field-effect transistor (OFET) devices, which rely on the generation of inversion, accumulation, and depletion…

We propose a thermal transistor based on a three-terminal normal-superconductor (NS) junction with superconductor terminal acting as the base. The emergence of heat amplification is due to the negative differential thermal conductance…

The longitudinal nonreciprocal charge transport (NCT) in crystalline materials is a highly non-trivial phenomenon, motivating the design of next generation two-terminal rectification devices (e.g., semiconductor diodes beyond PN junctions).…

Electronic structures of undoped and doped cyclic polythiophene (PT) are studied using modified $\sigma$-bond compressibility model. Cyclic PT doped with odd number of bipolarons creates an aromatic polyene backbone containing (4$n$+2)…

Electron Cyclotron Resonance Ion Sources are currently the most efficient ion sources among those used in facilities dedicated to nuclear physics. The need for a more flexible magnetic field and RF injection system suggested to design and…

Practical device architectures are proposed here for the implementation of three-terminal heterojunction bipolar transistor solar cells (3T-HBTSCs). These photovoltaic devices, which have a potential efficiency similar to that of…

We study a quantum system composed of three interacting qubits, each coupled to a different thermal reservoir. We show how to engineer it in order to build a quantum device that is analogous to an electronic bipolar transistor. We outline…

The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed…