Related papers: Giant negative magnetoresistance in high-mobility …
The apparent metal-insulator transition is observed in a high quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si_{1-x}Ge_x heterostructure with mobility \mu=1.9 x 10^5 cm^2/Vs at density n=1.45 x…
We examine the microwave-photoexcited magnetoresistance oscillations in a tilted magnetic field in the high mobility two-dimensional electron system. In analogy to the 2D Shubnikov-de Haas effect, the characteristic field, $B_{f}$, and the…
We have measured the zero-bias differential tunneling conductance of InAs/AlSb/GaS b/AlSb/InAs heterostructures at low temperatures (1.7K < T < 60K) and unde r a magnetic field at various angles with the heterostructure's interfaces. Shubni…
We investigate transport through 6 to 10 nm thin epitaxial GaAs(001) barriers sandwiched between polycrystalline iron films. Apart from a pronounced tunneling magnetoresistance effect (TMR) at low magnetic fields we observe a distinct…
Mani et al. have observed [1] zero-resistance states (ZRS) and energy gaps in a surprising setting: ultrahigh-mobility GaAs/AlGaAs heterostructures that contain a two dimensional electron Landau system (2DELS) exhibit vanishing diagonal…
A giant asymmetry in the magnetoresistance was revealed in high-mobility, two-dimensional electron gas on a cylindrical surface. The longitudinal resistance along the magnetic-field gradient impressed by the surface curvature was found to…
Zero differential resistance state is found in response to direct current applied to 2D electron systems at strong magnetic field and low temperatures. Transition to the state is accompanied by sharp dip of negative differential resistance,…
We present a study on the magnetization, anomalous Hall effect (AHE) and novel longitudinal resistivity in layered antiferromagnet Co$_{0.29}$TaS$_{2}$. Of particular interests in Co$_{0.29}$TaS$_{2}$ are abundant magnetic transitions,…
We calculate using the Boltzmann transport theory the density dependent mobility of two-dimensional (2D) electrons in GaAs, SiGe and AlAs quantum wells as well as of 2D holes in GaAs quantum wells. The goal is to precisely understand the…
We investigate, angle dependent, the magnetoresistance (MR) of individual self-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenic temperatures. The shape of the MR traces and the observed strong anisotropies in…
The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2],…
Magnetoresistance (MR) and magnetization (d.c and a.c) measurements have been carried out on the manganites, (La0.7-2xEux)(Ca0.3Srx)MnO3 (0.05<x<0.15), in the temperature range of 5K-320K. At 5K, an unusually large MR of almost 98% is…
We have calculated the resistivity of a GaAs\slash AlGaAs heterojunction in the presence of both an in--plane magnetic field and a weak perpendicular component using a semiclassical Boltzmann transport theory. These calculations take into…
The longitudinal and transverse voltages (resistances) have been measured for MgB$_2$ in zero external magnetic fields. Samples were prepared in the form of thin film and patterned into the usual Hall bar shape. In close vicinity of the…
Hall effect of two-dimensional holes that are spin-polarized by a strong parallel magnetic field was explored with a small tilt angle. The Hall resistivity increases nonlinearly with the magnetic field and exhibits negative corrections. The…
Viscous fluid in an ultrahigh-mobility two-dimensional electron gas (2DEG) in GaAs/AlGaAs quantum wells is systematically studied through measurements of negative magnetoresistance (NMR) and photoresistance under microwave radiation, and…
We theoretically analyzed the microwave-induced modification of the Hall magnetoresistivity in high mobility two-dimensional electron systems. These systems present diagonal magnetoresistivity oscillations and zero-resistance states when…
We develop a classical kinetic theory of magnetotransport of 2D electrons in narrow channels with partly diffusive boundary scattering and apply it to description of magnetoresistance measured in the temperature interval 4.2-30 K in long…
We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped…
The magnetotransport properties were studied in hundreds of micrometer length double-wall carbon nanotubes (DWCNT) bundles. Above 15 K the resistance shows an ohmic behavior and its temperature dependence is well described using the…