Related papers: Transport through a quantum spin Hall quantum dot
We discuss the transport properties of a quantum spin-Hall insulator with sizable Rashba spin-orbit coupling in a disk geometry. The presence of topologically protected helical edge states allows for the control and manipulation of spin…
Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while…
Time-periodic perturbations due to classical electromagnetic fields are useful to engineer the topological properties of matter using the Floquet theory. Here we investigate the effect of quantized electromagnetic fields by focusing on the…
A system of electrons in two dimensions and strong magnetic fields can be tuned to create a gapped 2D system with one dimensional channels along the edge. Interactions among these edge modes can lead to independent transport of charge and…
We study the suppression of the conductance quantization in quantum spin Hall systems by a combined effect of electronic interactions and edge disorder, that is ubiquitous in exfoliated and CVD grown 2D materials. We show that the interplay…
Topological insulators insulate in the bulk but exhibit robust conducting edge states protected by the topology of the bulk material. Here, we design a colloidal topological insulator and demonstrate experimentally the occurrence of edge…
Electrical transport in three dimensional topological insulators(TIs) occurs through spin-momentum locked topological surface states that enclose an insulating bulk. In the presence of a magnetic field, surface states get quantized into…
We study the low-energy spectrum of a single hole confined in a planar Ge quantum dot (QD) within the effective-mass formalism. The QD is sandwiched between two GeSi barriers of finite potential height grown along the [001] direction. To…
Magnetic topological insulators (MTIs) host topologically protected edge states, but the role that these edge states play in electronic transport remains unclear. Using scanning superconducting quantum interference device (SQUID)…
We present transport measurements on a lateral double dot produced by combining local anodic oxidation and electron beam lithography. We investigate the tunability of our device and demonstrate, that we can switch between capacitive and…
We examine transport through a quantum dot coupled to three ferromagnetic leads in the regime of weak tunnel coupling. A finite source-drain voltage generates a nonequilibrium spin on the otherwise non-magnetic quantum dot. This spin…
We study spin-dependent transport through a quantum nanostructure composed of a quantum dot (QD) surrounded by a quantum nanoring. The nanostructure is side-attached to source and drain electrodes and we assume that the confining potential…
Quantum spin Hall (QSH) insulators are a topologically protected phase of matter in two dimensions that can support non-dissipative spin transport. A hallmark of the phase is a pair of helical edge states surrounding an insulating bulk. A…
Quantum spin Hall (QSH) insulators and Mott insulators are conventionally regarded as distinct insulating phases, arising from band topology and strong Coulomb interactions, respectively. Here, we report the observation of QSH edge…
We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts…
The nature of a metal--insulator transition tuned by external gates in quantum Hall (QH) systems with point constrictions at integer bulk filling, as reported in recent experiments of Roddaro et al. [1], is addressed. We are particularly…
We show that burying of the Dirac point in semiconductor-based quantum-spin-Hall systems can generate unexpected robustness of edge states to magnetic fields. A detailed ${\bf k\cdot p}$ band-structure analysis reveals that InAs/GaSb and…
We study the quantized charge pumping of higher-order topological insulators (HOTIs) with edge-corner correspondences based on the combination of the rotation of in-plane magnetic field and the quantum spin Hall effect. A picture of a…
We study the effect of an external magnetic field on the transport properties of a quantum dot using a recently developed extension of the functional renormalization group approach to non-equilibrium situations. We discuss in particular the…
We consider a model for an edge state of electronic systems in the quantum Hall regime with filling $\nu=1$ and in the quantum spin Hall regime. In both cases the system is in contact with two reservoirs by tunneling at point contacts. Both…