Related papers: Transport through a quantum spin Hall quantum dot
We analyze a quantum spin Hall (QSH) device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the…
We study the influences of antidot-induced bound states on transport properties of two- dimensional quantum spin Hall insulators. The bound statesare found able to induce quantum percolation in the originally insulating bulk. At some…
Semiconductor quantum dots (QDs) offer a platform to explore the physics of quantum electronics including spins. Electron spins in QDs are considered good candidates for quantum bits in quantum information processing, and spin control and…
The discovery of the Quantum Spin Hall state, and topological insulators in general, has sparked strong experimental efforts. Transport studies of the Quantum Spin Hall state confirmed the presence of edge states, showed ballistic edge…
A strong coupling between the electron spin and its motion is one of the prerequisites of spin-based data storage and electronics. A major obstacle is to find spin-orbit coupled materials where the electron spin can be probed and…
We explore potentials that break time-reversal symmetry to confine the surface states of 3D topological insulators into quantum wires and quantum dots. A magnetic domain wall on a ferromagnet insulator cap layer provides interfacial states…
We study the dynamics of a quantum spin Hall edge coupled to a magnet with its own dynamics. Using spin transfer torque principles, we analyze the interplay between spin currents in the edge state and dynamics of the axis of the magnet, and…
We theoretically investigate electrical transport in a quantum Hall system hosting bulk and edge current carrying states. Spatially varying magnetic and electric confinement creates pairs of current carrying lines that drift in the same or…
Topological aspects of superconductivity in quantum spin-Hall systems (QSHSs) such as thin layers of three-dimensional topological insulators (3D Tis) or two-dimensional Tis are in the focus of current research. We examine hybrid…
We evidence the possibility for coherent electrical manipulation of the spin orientation of topologically protected edge states in a low-symmetry quantum spin Hall insulator. By using a combination of ab-initio simulations, symmetry-based…
Topologically-protected edge states are dissipationless conducting surface states immune to impurity scattering and geometrical defects that occur in electronic systems characterized by a bulk insulating gap. One example can be found in a…
We investigate the behavior of spin polarized currents in two-dimensional topological insulators (TI). Stationary solutions inside a HgTe/CdTe quantum well (QW) were obtained by Bernevig-Hughes-Zhang (BHZ) model modified by a electric and…
The quantum spin Hall (QSH) states discovered in an inverted band of InAs/GaSb and HgTe/CdTe quantum wells categorize them among the very superior candidates for topological insulators. In the presence of a magnetic field, these QSH states…
We show that the Quantum Spin Hall Effect, a state of matter with topological properties distinct from conventional insulators, can be realized in HgTe/CdTe semiconductor quantum wells. By varying the thickness of the quantum well, the…
The experiments in quantum spin Hall insulator candidate materials, such as HgTe/CdTe and InAs/GaSb heterostructures, indicate that in addition to the topologically protected helical edge modes these multilayer heterostructures may also…
We consider a single-level quantum dot coupled to magnetic insulators (magnonic reservoirs) and magnetic metals (electronic reservoirs). The whole system is in an external magnetic field. In a general case, the system includes two magnonic…
We report transport measurements in a single edge channel of an InAs/GaSb quantum spin Hall insulator, where the conduction occurs through only one pair of counterpropagating edge modes. By using a specific sample design involving highly…
Magnetoresistance measurements have been performed on a gated two-dimensional electron system (2DES) separated by a thin barrier layer from a layer of InAs self-assembled quantum dots (QDs). Clear features of the quantum Hall effect were…
In the integer quantum Hall (IQH) regime, an antidot provides a finite, controllable `edge' of quantum Hall fluid that is an ideal laboratory for investigating the collective dynamics of large numbers of interacting electrons. Transport…
In the presence of a scattering potential, electron transport in a quantum wire is known to be dramatically modified by backward scattering and unaffected by forward scattering processes. We show that the scenario is quite different in…