Related papers: Spin Transfer from a Ferromagnet into a Semiconduc…
We investigated the spin-dependent transport properties of a lateral spin-valve device with a 600 nm-long GaAs channel and ferromagnetic MnGa electrodes with perpendicular magnetization. Its current-voltage characteristics show nonlinear…
Efficient injection of spin-polarized electrons into the conduction band of silicon is limited by the formation of a silicide at the ferromagnetic metal (FM)/silicon interface. In the present work, this "magnetically-dead" silicide (where…
As a hallmark of electronic correlation, spin-charge interplay underlies many emergent phenomena in doped Mott insulators, such as high-temperature superconductivity, whereas the half-filled parent state is usually electronically frozen…
Spin Hall magnetoresistance (SMR) has been observed in Pt/NiO/Y3Fe5O12 (YIG) heterostructures with characteristics very different from those in Pt/YIG. We show that the SMR in Pt/NiO/YIG strongly correlates with spin conductance, both…
We have studied the spin and exchange coupling of Ti atoms on a Cu$_2$N/Cu(100) surface using density functional theory. We find that individual Ti have a spin of 1.0 (i.e., 2 Bohr Magneton) on the Cu$_2$N/Cu(100) surface instead of…
We experimentally investigate spin-polarized transport between a ferromagnetic Ni electrode and a surface of Weyl semimetal, realized in a thick WTe$_2$ single crystal. For highly-transparent Ni-WTe$_2$ planar junctions, we observe…
We report detailed magnetization measurements on the perovskite oxide NdNiO$_3$. This system has a first order metal-insulator (M-I) transition at about 200 K which is associated with charge ordering. There is also a concurrent paramagnetic…
Noncollinear metallic antiferromagnets, with their rapid spin dynamics, efficient spin transport, and distinctive spin textures, play a pivotal role in advancing the field of spintronics. In this study, we report a comprehensive…
We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As…
Entanglement of spin and orbital degrees of freedom, via relativistic spin-orbit coupling, in 4$d$ transition metal oxides can give rise to a variety of novel quantum phases. A previous study of mixed 3$d$-4$d$ quasi-1D spin-chain oxide…
We report a two-step process for the fabrication of superconductor-insulator-normal metal tunnel junctions using NbN as the superconducting electrode and its surface oxide as the insulating tunnel barrier, and investigate its efficacy in…
Antiferromagnetic Weyl semimetal Mn$_3$Sn has shown to generate strong intrinsic anomalous Hall effect (AHE) at room temperature, due to large momentum-space Berry curvature from the time-reversal symmetry breaking electronic bands of the…
New efficient mechanism of obtaining spin polarization in_nonmagnetic_ semiconductors at arbitrary temperutures is described. The effect appears during tunneling of electrons from a nonmagnetic semiconductors (S) into ferromagnet (FM)…
Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
The antiferromagnets with the time-reversal symmetry broken magnetic structures possess a finite spin splitting in the momentum space, and may contribute to a realization of a finite tunnel magnetoresistance (TMR) effect even with magnets…
We study the spin diffusion in a two-dimensional electron gas at the interface of oxide heterostructure LaAlO$_3$/SrTiO$_3$ grown on multiferroic TbMnO$_3$ at 15 K by means of the kinetic spin Bloch equation approach. The spiral magnetic…
We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…
We report anistropy in superconducting and normal state of NiBi3 single crystals with Tc = 4.06 K. The magnetoresistance results indicate the absence of scattering usually associated with ferromagnetic metals, suggesting the absence of bulk…
We study in this paper the parallel spin current in an antiferromagnetic semiconductor thin film where we take into account the interaction between itinerant spins and lattice spins. The spin model is an anisotropic Heisenberg model. We use…