Anomalous Magnetoresistance due to Longitudinal Spin Fluctuations in a Jeff = 1/2 Mott Semiconductor
Abstract
As a hallmark of electronic correlation, spin-charge interplay underlies many emergent phenomena in doped Mott insulators, such as high-temperature superconductivity, whereas the half-filled parent state is usually electronically frozen with an antiferromagnetic order that resists external control. We report on the observation of a new positive magnetoresistance that probes the staggered susceptibility of a pseudospin-half square-lattice Mott insulator built as an artificial SrIrO3/SrTiO3 superlattice. Its size is particularly large in the high-temperature insulating paramagnetic phase near the N\'eel transition. This novel magnetoresistance originates from a collective charge response to the large longitudinal spin fluctuations under a linear coupling between the external magnetic field and the staggered magnetization enabled by strong spin-orbit interaction. Our results demonstrate a magnetic control of the binding energy of the fluctuating particle-hole pairs in the Slater-Mott crossover regime analogous to the BCS-to-Bose-Einstein condensation crossover of ultracold-superfluids.
Keywords
Cite
@article{arxiv.1910.13611,
title = {Anomalous Magnetoresistance due to Longitudinal Spin Fluctuations in a Jeff = 1/2 Mott Semiconductor},
author = {Lin Hao and Zhentao Wang and Junyi Yang and D. Meyers and Joshua Sanchez and Gilberto Fabbris and Yongseong Choi and Jong-Woo Kim and Daniel Haskel and Philip J. Ryan and Kipton Barros and Jiun-Haw Chu and M. P. M. Dean and Cristian D. Batista and Jian Liu},
journal= {arXiv preprint arXiv:1910.13611},
year = {2019}
}
Comments
Accepted by Nature communications