Orbital-Selective Spin-Orbit Mott Insulator in Fractional Valence Iridate La$_3$Ir$_3$O$_{11}$
Abstract
The combination of strong spin-orbit coupling and Coulomb interactions makes the iridates a unique platform for realizing novel correlated electronic states. Here, utilizing infrared spectroscopy, we demonstrate that a robust Mott insulating state persists in the -hole self-doped system LaIrO, evidenced by the collapse of the Drude response and the emergence of sharp excitations across the Mott gap. Our theoretical calculations reveal that the insulating behavior arises from the cooperative interplay of structural distortions, spin-orbit coupling, and Coulomb interactions. Specifically, octahedral distortion and Ir-Ir dimerization split the orbitals, driving the bands toward half-filling while keeping the bands away from it. Consequently, electron correlations induce an orbital-selective Mott transition in the bands, whereas a band-insulating gap develops in the bands, thereby stabilizing the unconventional insulating state in LaIrO. These findings provide new insights into the design and understanding of the insulating ground state of spin-orbit-coupled iridates.
Keywords
Cite
@article{arxiv.2603.04739,
title = {Orbital-Selective Spin-Orbit Mott Insulator in Fractional Valence Iridate La$_3$Ir$_3$O$_{11}$},
author = {Kai Wang and Jun Yang and Chaoyang Kang and Weikang Wu and Wenka Zhu and Jianzhou Zhao and Yaomin Dai and Bing Xu},
journal= {arXiv preprint arXiv:2603.04739},
year = {2026}
}
Comments
8 pages, 3 figures