Related papers: Pronounced Effect of pn-Junction Dimensionality on…
In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by atomistic quantum transport simulations. The switching…
Tunneling from a two-dimensional contact into quantum-Hall edges is considered theoretically for a case where the barrier is extended, uniform, and parallel to the edge. In contrast to previously realized tunneling geometries, details of…
Resonant tunneling through identical potential barriers is a textbook problem in quantum mechanics. Its solution yields total transparency (100% tunneling) at discrete energies. This dramatic phenomenon results from coherent interference…
The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature $T$, carrier density $n$, and the applied perpendicular magnetic field $B$. In zero magnetic field the equilibrium resonant…
Stacks of a few intrinsic tunnel junctions were micro-fabricated on the surface of Bi-2212 single crystals. The number of junctions in a stack was tailored by progressively increasing the height of the stack by ion-beam etching, while its…
We present full quantum mechanical calculations of the hybridized plasmon modes of two nanowires at small separation, providing real space visualization of the modes in the transition from the classical to the quantum tunneling regime. The…
The charge transfer statistics of a tunnel junction coupled to a quantum object is studied using the charge projection technique. The joint dynamics of the quantum object and the number of charges transferred through the junction is…
In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all…
Probabilistic computing is a novel computing scheme that offers a more efficient approach than conventional CMOS-based logic in a variety of applications ranging from optimization to Bayesian inference, and invertible Boolean logic. The…
A triple-heterojunction (3HJ) design is employed to improve p-type InAs/GaSb heterojunction (HJ) tunnel FETs. The added two HJs (AlInAsSb/InAs in the source and GaSb/AlSb in the channel) significantly shorten the tunnel distance and create…
We measure the current vs voltage (I-V) characteristics of a diodelike tunnel junction consisting of a sharp metallic tip placed at a variable distance d from a planar collector and emitting electrons via electric-field assisted emission.…
We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2D electron system. For most 2D Landau level filling factors, we find that tunneling can be characterized by a single,…
This work reports the design and analysis of an n-type tunneling field effect transistor based on InN. The tunneling current is evaluated from the fundamental principles of quantum mechanical tunneling and semiclassical carrier transport.…
General multi-channel SN junctions fall into two topological classes depending on whether or not there is a Majorana mode localized at the junction. This is known to lead to different behaviour of the conductance in the presence of…
We derive exact sum-rules that relate the tunneling density of states (TDOS) of spinful electrons in the fractional quantum Hall (FQH) regime to the spin-dependent many body ground state correlation energy. Because the tunneling process is…
Interband quantum tunneling of electrons in semiconductors is of intense recent interest as the underlying transport mechanism in tunneling field-effect transistors. Such transistors can potentially perform electronic switching with lower…
We calculate the stationary current through two double quantum dots which are interacting via a common phonon environment. Numerical and analytical solutions of a master equation in the stationary limit show that the current can be…
Theoretical predictions are made for the current-voltage characteristics of two-dimensional heterojunction interlayer tunneling field-effect transistors (Thin-TFETs), focusing on the magnitude of the current that is achievable in such…
Pentagonal PdSe2 is a promising candidate for layered electronic devices, owing to its high air-stability and anisotropic transport properties. Here, we investigate the performance of p-type FET based on PdSe$_2$ mono-layer using…
We present a method for obtaining quantum transport properties in graphene that uniquely combines three crucial features: microscopic treatment of charge disorder, fully quantum mechanical analysis of transport, and the ability to model…