Related papers: Pronounced Effect of pn-Junction Dimensionality on…
Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit…
Low dimensional material systems provide a unique set of properties useful for solid-state devices. The building block of these devices is the PN junction. In this work, we present a dramatic difference in the electrostatics of PN junctions…
A long skinny gate across a fractional quantum Hall fluid at filling $\nu=1/m$ with odd integer $m$, creates a novel one-dimensional (1d) system which is isomorphic to a disordered 1d electron gas with {\it attractive} interactions. By…
Low dimensional material systems provide a unique set of properties useful for solid-state devices. The building block of these devices is the PN junction. In this work, we present a dramatic difference in the electrostatics of PN junctions…
We investigate the impact of edge roughness on the electrical transport properties of magnetic tunnel junctions using non-equilibrium Greens function formalism. We have modeled edge roughness as a stochastic variation in the cross-sectional…
The pn junction is a fundamental electrical component in modern electronics and optoelectronics. Currently, there is a great deal of interest in the two-dimensional (2D) pn junction. Although many experiments have demonstrated the working…
Theoretical treatments of tunneling in electronic devices are often based on one-dimensional (1D) approximations. Here we show that for many nanoscale devices, such as widely studied semiconductor gate-defined quantum dots, 1D…
A requirement for quantum information processors is the in-situ tunability of the tunnel rates and the exchange interaction energy within the device. The large energy level separation for atom qubits in silicon is well suited for qubit…
In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of…
Tunneling field-effect transistors (TFETs) based on 2D materials are promising steep sub-threshold swing (SS) devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2D TFETs: electrical…
The electrostatics of two-dimensional (2D) lateral pn homojunctions considering the impact of electrostatic doping by means of two split bottom-gates are studied here. Analytical expressions are obtained from the solution of the 2D Poisson…
We propose a Heterojunction Vertical Tunneling FET and show using self-consistent ballistic quantum transport simulations that it can provide very steep subthreshold swings and high ON current, thereby improving the scalability of Tunnel…
A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron microscopy and off-axis electron holography have opened up…
The characteristics of tunnel junctions formed between n- and p-doped graphene are investigated theoretically. The single-particle tunnel current that flows between the two-dimensional electronic states of the graphene (2D-2D tunneling) is…
We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required…
When a constriction is realized in a 2D quantum spin Hall system, electron tunneling between helical edge states occurs via two types of channels allowed by time-reversal symmetry, namely spin-preserving ({p}) and spin-flipping ({f})…
A study of magneto-transport through quantum dots is presented. The model allows to analyze tunnelling both from bulk-like contacts and from 2D accumulation layers. The fine features in the I-V characteristics due to the quantum dot states…
To test the quality of a tunnel junction, one sometimes fits the bias-dependent differential conductance to a theoretical model, such as Simmons's formula. Recent experimental work by {\AA}kerman and collaborators, however, has demonstrated…
We investigate numerically the signatures of collective modes in the tunneling spectra of superconductors. The larger strength of the signatures observed in the high-Tc superconductors, as compared to classical low-Tc materials, is…
We study the relationship between the differential conductance and the local density of states in tight-binding tunnel junctions where the junction' geometry can be varied between the point-contact and the planar-contact limits. The…