Related papers: Field-induced negative differential spin lifetime …
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin…
A unique spin depolarization mechanism, induced by the presence of g-factor anisotropy and intervalley scattering, is revealed by spin transport measurements on long-distance germanium devices in a longitudinal magnetic field. The…
The spin relaxation time of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot-Yafet, D'yakonov-Perel, and Bir-Aronov-Pikus…
A hybrid ferromagnet/semiconductor device is used to determine a lower bound on the spin lifetime for conduction electrons in silicon. We use spin precession to self-consistently measure the drift velocity vs. drift field of spin-polarized…
Longitudinal relaxation is the process by which an excited spin ensemble decays into its thermal equilibrium with the environment. In solid-state spin systems relaxation into the phonon bath usually dominates over the coupling to the…
We utilize nanoscale spin valves with Pt spacer layers to characterize spin scattering in Pt. Analysis of the spin lifetime determined from our measurements indicates that the extrinsic Elliot-Yafet spin scattering is dominant at room…
We develop a semiclassical kinetic theory for electron spin relaxation in semiconductors. Our approach accounts for elastic as well as inelastic scattering and treats Elliott-Yafet and motional-narrowing processes, such as D'yakonov-Perel'…
We report a computational theoretical investigation of electron spin-flip scattering induced by the electron-phonon interaction in the transition-metal ferromagnets bcc Fe, fcc Co and fcc Ni. The Elliott-Yafet electron-phonon spin-flip…
We study the transport of spin polarized electrons in n-GaAs using spatially resolved continuous wave Faraday rotation. From the measured steady state distribution, we determine spin relaxation times under drift conditions and, in the…
The temperature dependence of the electron spin relaxation time in MgB2 is anomalous as it does not follow the temperature dependence of the resistivity above 150 K, it has a maximum around 400 K, and it decreases for higher temperatures.…
The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this phenomenon. In this work we show that this feature can…
We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a…
The electronic properties of the novel two dimensional (2D) material silicene are strongly influenced by the application of a perpendicular electric field $E_z$ and of an exchange field $M$ due to adatoms positioned on the surface or a…
Using a two-dimensional finite-differences scheme to model spin transport in silicon devices with lateral geometry, we simulate the effects of spin relaxation at interfacial boundaries, i.e. the exposed top surface and at an…
The changes of the spin depolarization length in zinc-blende semiconductors when an external component of correlated noise is added to a static driving electric field are analyzed for different values of field strength, noise amplitude and…
The concept of anisotropy of spin relaxation in non-magnetic metals with respect to the spin direction of the injected electrons relative to the crystal orientation is introduced. The effect is related to an anisotropy of the Elliott-Yafet…
Through the theoretical study of electron spin lifetime in the 2DEG of doped Si, we highlight a dominant spin relaxation mechanism induced by the impurity central-cell potential near an interface via intervalley electron scattering. At low…
Spin transport experiments in graphene, a single layer of carbon atoms, indicate spin relaxation times that are significantly shorter than the theoretical predictions. We investigate experimentally whether these short spin relaxation times…
Electron spin relaxation induced by phonon-mediated s-d exchange interaction in a II-VI diluted magnetic semiconductor quantum dot is investigated theoretically. The electron-acoustic phonon interaction due to piezoelectric coupling and…
We present a theory for spin relaxation of electrons due to scattering off the central-cell potential of impurities in silicon. Taking into account the multivalley nature of the conduction band and the violation of translation symmetry, the…