Related papers: Field-induced negative differential spin lifetime …
Electron-phonon interaction has been well known to create major resistance to electron transport in metals and semiconductors, whereas less studies were directed to its effect on the phonon transport, especially in semiconductors. We…
Theory of the electron spin relaxation in graphene on the SiO$_2$ substrate is developed. Charged impurities and polar optical surface phonons in the substrate induce an effective random Bychkov-Rashba-like spin-orbit coupling field which…
We determine the spin-lifetime anisotropy of spin-polarized carriers in graphene. In contrast to prior approaches, our method does not require large out-of-plane magnetic fields and thus it is reliable for both low- and high-carrier…
We analyze spin-dependent carrier dynamics due to incoherent electron-phonon scattering, which is commonly referred to as Elliott-Yafet (EY) spin-relaxation mechanism. For this mechanism one usually distinguishes two contributions: (1) from…
The temperature dependence of the spin diffusion length typically reflects the scattering mechanism responsible for spin relaxation. Within non-magnetic metals it is reasonable to expect the Elliot-Yafet mechanism to play a role and thus…
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…
The spin relaxation induced by the Elliott-Yafet mechanism and the extrinsic spin Hall conductivity due to the skew-scattering are investigated in 5d transition-metal ultrathin films with self-adatom impurities as scatterers. The values of…
We discuss the influence of electrical effects on spin transport, and in particular the propagation and relaxation of spin polarized electrons in the presence of inhomogeneous electric fields. We show that the spin relaxation length…
In graphene, out-of-plane (flexural) vibrations and static ripples imposed by the substrate relax the electron spin, intrinsically protected by mirror symmetry. We calculate the relaxation times in different scenarios, accounting for all…
Spin dephasing by the Dyakonov-Perel mechanism in metallic films deposited on insulating substrates is revealed, and quantitatively examined by means of density functional calculations combined with a kinetic equation. The…
In the present paper we study the spontaneous photon emission due to a magnetic spin-flip transition of a two-level atom in the vicinity of a dielectric body like a normal conducting metal or a superconductor. For temperatures below the…
We present a generally applicable parameter-free first-principles method to determine electronic spin relaxation times and apply it to the technologically important group-IV materials silicon, diamond and graphite. We concentrate on the…
We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current…
Electron spin oriented along an external magnetic field is subject to longitudinal spin relaxation with characteristic time $T_1$. The corresponding decay is nonoscillating, so one cannot readily ascribe $T_1$ to a certain $g$ factor. This…
Understanding spin relaxation in topological systems such as quantum spin-hall (QSH) insulator is critical for realizing coherent transport at high temperature. WTe$_{2}$, known as a QSH insulator with a high transition temperature of 100K,…
We derive the spontaneous and thermal spin-flip rates for a neutral two-level ultra-cold atom that is coupled to a magnetic field. We apply this theory to an atom in the vicinity of a 2-layer cylindrical absorbing dielectric body surrounded…
Doped ZnO is a promising material for spintronics applications. For such applications, it is important to understand the spin dynamics and particularly the spin coherence of this II-VI semiconductor. The spin lifetime $\tau_{s}$ has been…
We present a general unifying theory for spin polarization decay due to the interplay of spin precession and momentum scattering that is applicable to both spin-1/2 electrons and spin-3/2 holes. Our theory allows us to identify and…
We simulate spin polarized transport of electrons along a silicon nanowire and along a silicon two dimensional channel. Spin density matrix calculations are used along with the semi-classical Monte Carlo approach to model spin evolution…
Microscopic coupling between the electron spin and the lattice vibration is responsible for an array of exotic properties from morphic effects in simple magnets to magnetodielectric coupling in multiferroic spinels and hematites.…