Related papers: Field-induced negative differential spin lifetime …
We investigate spin relaxation in graphene spin valves and observe strongly contrasting behavior for single layer graphene (SLG) and bilayer graphene (BLG). In SLG, the spin lifetime ({\tau}s) varies linearly with the momentum scattering…
A theory for the relation between the spin polarization and luminescence in silicon is presented. The theory provides intuitive relations for phonon-assisted optical transitions between the conduction and valence band edges. It is shown…
We study the effect of the disorder on the metallic behavior of a two-dimensional electron system in silicon. The temperature dependence of conductivity $\sigma (T)$ was measured for different values of substrate bias, which changes both…
An experimental technique for the indirect manipulation and detection of electron spins entangled in two-dimensional magnetoexcitons has been developed. The kinetics of the spin relaxation has been investigated. Photoexcited…
The role of staggered potential on light-induced spin and pseudo-spin polarization has been investigated in silicene. It has been shown that non-equilibrium spin and pseudo-spin polarizations are emerged in silicene sheet by applying an…
The chirality-induced spin selectivity (CISS) effect gives rise to strongly spin-dependent transport through many organic molecules and structures. Its discovery raises fascinating fundamental questions as well as the prospect of possible…
This work considers the g-tensor anisotropy induced by the flexural thermal vibrations in one-dimensional structures and its role in electron spin relaxation. In particular, the mechanism of spin-lattice relaxation via flexural modes is…
We present a detailed study of the imaginary and real parts of the spin-susceptibility of silicene which can be generalized to other buckled honeycomb structure. We find that while the off-diagonal components are non-zero in individual…
Reflection and transmission of electrons scattered by a rectangular potential step in the presence of an external magnetic field parallel to the electron beam is described with the use of the Dirac equation. It is shown that in addition to…
We investigate spin transport by thermally excited spin waves in an antiferromagnetic insulator. Starting from a stochastic Landau-Lifshitz-Gilbert phenomenology, we obtain the out-of-equilibrium spin-wave properties. In linear response to…
Utilizing time-resolved Kerr rotation techniques, we have investigated the spin dynamics of a high mobility, low density two dimensional electron gas in a GaAs/Al0:35Ga0:65As heterostructure in dependence on temperature from 1.5 K to 30 K.…
We show that the parallel magnetic field-induced increase in the critical electron density for the Anderson transition in a strongly interacting two-dimensional electron system is caused by the effects of exchange and correlations. If the…
A slanting magnetic field is usually used to realize a slight hybridization between the spin and orbital degrees of freedom in a semiconductor quantum dot, such that the spin is manipulable by an external oscillating electric field. Here we…
The performance of silicon nano-devices at cryogenic temperatures is critical for quantum qubit control circuits and space applications. Using multi-valley Monte Carlo simulations, we investigate electron transport in Si~(110) systems. At…
Electron spin diffusion is investigated in monolayer MoS$_2$ in the absence of external electric and magnetic fields. The electron-impurity scattering, which is shown to play a negligible role in spin relaxation in time domain in this…
The observation of spin-dependent transport through organic chiral structures has sparked numerous fundamental and applicative questions ranging from biology to spintronics. By now, there is a broad consensus that the effect results from…
We construct a spin-drift-diffusion model to describe spin-polarized electron transport in zincblende semiconductors in the presence of magnetic fields, electric fields, and off-diagonal strain. We present predictions of the model for…
The temperature evolution of spin relaxation time, {\tau}sf, in degenerate silicon (Si)-based lateral spin valves is investigated by means of the Hanle effect measurements. {\tau}sf at 300 K is estimated to be 1.68+-0.03 ns and…
We theoretically investigate the indirect optical injection of carriers and spins in bulk silicon, using an empirical pseudopotential description of electron states and an adiabatic bond charge model for phonon states. We identify the…
Graphene has emerged as the foremost material for future two-dimensional spintronics due to its tuneable electronic properties. In graphene, spin information can be transported over long distances and, in principle, be manipulated by using…