Related papers: AlGaAs/GaAs/AlGaAs quantum wells as a sensitive to…
We introduce a design of electrically isolated floating bilayer GaAs quantum wells (QW) in which application of a large gating voltage controllably and highly reproducibly induces charges that remain trapped in the bilayer after removal of…
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity…
We collect and review works which treat two-dimensional electron gases in quantum wells (mostly GaAs/GaAlAs heterostructures) in the presence of quantizing magnetic fields as open systems in contact with outside reservoirs. If a reservoir…
We present a realization of two-qubit controlled-phase gate, based on the linear and nonlinear properties of the probe and signal optical pulses in an asymmetric GaAs/AlGaAs double quantum wells. It is shown that, in the presence of…
Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high…
Planar light-emitting diodes (LEDs) fabricated within a single high-mobility quantum well are demonstrated. Our approach leads to a dramatic reduction of radiative lifetime and junction area with respect to conventional vertical LEDs,…
We present the fabrication details of completely undoped electron-hole bilayer devices in a GaAs/AlGaAs double quantum well heterostructure with a 30 nm barrier. These devices have independently tunable densities of the two-dimensional…
We demonstrate that coupled AlGaN/GaN quantum wells with asymmetric widths ($L_1-L_2<30 $ A achieve up to 4.5 times higher mobility than single wells at optimal separation (d = 100 A). Crucially, mobility surpasses single wells when d>40 A…
Quantum well states (QWSs) can form at the surface or interfaces of materials with confinement potential. They have broad applications in electronic and optical devices such as high mobility electron transistor, photodetector and quantum…
This paper assesses intersubband transitions in the 1 to 10 THz frequency range in nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi-insulating GaN substrates. The quantum wells were designed to contain two…
GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such…
We propose an engineering of the optical properties of GaAs/AlGaAs quantum wells using AlAs and InAs monolayer insertions. A quantitative study of the effects of the monolayer position and the well thickness on the interband and…
We report the observation of a colossal, narrow resistance peak that arises in ultraclean (mobility 3X10^7cm^2/Vs) GaAs/AlGaAs quantum wells (QWs) under millimeterwave irradiation and a weak magnetic field. Such a spike is superposed on the…
The photoluminescence (PL) spectra of a two-dimensional electron system induced in a Be-delta-doped GaAs/AlGaAs quantum well (QW) with a back gate are measured. The electron density is controlled from 1 X 10^{9} cm^{-2} to 2.5 X 10^{11}…
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates…
Motivated by recent breakthrough in molecular beam epitaxy of GaAs/AlGaAs quantum wells [Y. J. Chung \textit{et al.}, Nature Materials \textbf{20}, 632 (2021)], we examine contributions to mobility and quantum mobility from various…
We report an experimental study of the quantum corrections to the longitudinal conductivity and the Hall coefficient of a low mobility, high density two-dimensional two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide…
We report on the fabrication and characterization of a few-electron quantum dot controlled by a single gate electrode. Our device has a double-quantum-well design, in which the doping controls the occupancy of the lower well while the upper…
We report experimental results on a quantum point contact (QPC) device formed in a wide AlAs quantum well where the two-dimensional electrons occupy two in-plane valleys with elliptical Fermi contours. To probe the closely-spaced,…
We investigate the luminescence of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on freestanding GaN as well as 6H-SiC substrates. In striking contrast to their…