English

The two-qubit controlled-phase gate based on cross-phase modulation in GaAs/AlGaAs semiconductor quantum wells

Optics 2012-01-19 v2 Quantum Physics

Abstract

We present a realization of two-qubit controlled-phase gate, based on the linear and nonlinear properties of the probe and signal optical pulses in an asymmetric GaAs/AlGaAs double quantum wells. It is shown that, in the presence of cross-phase modulation, a giant cross-Kerr nonlinearity and mutually matched group velocities of the probe and signal optical pulses can be achieved while realizing the suppression of linear and self-Kerr optical absorption synchronously. These characteristics serve to exhibit an all-optical two-qubit controlled-phase gate within efficiently controllable photon-photon entanglement by semiconductor mediation. In addition, by using just polarizing beam splitters and half-wave plates, we propose a practical experimental scheme to discriminate the maximally entangled polarization state of two-qubit through distinguishing two out of the four Bell states. This proposal potentially enables the realization of solid states mediated all-optical quantum computation and information processing.

Keywords

Cite

@article{arxiv.1201.3434,
  title  = {The two-qubit controlled-phase gate based on cross-phase modulation in GaAs/AlGaAs semiconductor quantum wells},
  author = {X. Q. Luo and D. L. Wang and H. Fan and W. M. Liu},
  journal= {arXiv preprint arXiv:1201.3434},
  year   = {2012}
}

Comments

7 pages, 5 figures

R2 v1 2026-06-21T20:05:28.459Z