Related papers: BN/Graphene/BN Transistors for RF Applications
The MOS devices are the basic building block of any digital and analog circuits, where silicon (Si) is the most commonly used material. The International Technology Roadmap Semiconductor (ITRS) report predicts the gate length of the MOS…
Bilayer graphene field-effect transistors (BLG-FETs), unlike conventional semiconductors, are greatly sensitive to potential fluctuations due to the charged impurities in high-k gate stacks since the potential difference between two layers…
Transistors operating at high frequencies are the basic building blocks of millimeter-wave communication and sensor systems. The high velocity and mobility of carriers in graphene can open way for ultra-fast group IV transistors with…
We present an analytical device model for a graphene bilayer field-effect transistor (GBL-FET) with a graphene bilayer as a channel, and with back and top gates. The model accounts for the dependences of the electron and hole Fermi energies…
Bilayer graphene is a promising material for radio-frequency transistors because its energy gap might result in a better current saturation than the monolayer graphene. Because the great deal of interest in this technology, especially for…
Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width…
High frequency performance limits of graphene field-effect transistors (FETs) down to a channel length of 20nm are examined by using self-consistent quantum simulations. The results indicate that although Klein band-to-band tunneling is…
Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…
In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate…
A graphene field effect transistor, where the active area is made of monolayer large-area graphene, is simulated including a full 2D Poisson equation and a drift-diffusion model with mobilities deduced by a direct numerical solution of the…
Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached…
The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator…
We demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to…
The past decade has seen rapid growth in the research area of graphene and its application to novel electronics. With Moore's law beginning to plateau, the need for post-silicon technology in industry is becoming more apparent. Moreover,…
In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The…
High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these…
This paper provides an overview on graphene solution-gated field effect transistors (SGFETs) and their applications in bioelectronics. The fabrication and characterization of arrays of graphene SGFETs is presented and discussed with respect…
In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor…
We performed radiofrequency (RF) reflectometry measurements at 2.4 GHz on electrolyte-gated graphene field-effect transistors (GFETs) utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage…
Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfils…