Related papers: Electrical conduction processes in ZnO in a wide t…
The dielectric properties of NiO thin films grown by pulsed laser deposition have been studied as a function of strain at temperature from 10 to 300 K. Above 150 K, the contribution of space-charge polarization to the dielectric…
At T_c-T<<T_c(i.e., near T_c), in order to demonstrate the condudction mechanism and temperature dependencies of the diamagnetic-shielding susceptibility and the penetration depth, we fabricated Ba_1_xBiO_3(BKBO) thin films and measured the…
To examine the thermodynamic properties of Pr$_{2}$Ba$_{4}$Cu$_{7}$O$_{15-\delta }$ compounds with metallic CuO double chains, we measured the specific heats of superconducting and non-superconducting polycrystalline samples at low…
The thermoelectric properties of Sr0.61Ba0.39Nb2O6 ceramics, reduced in different conditions, were investigated in the temperature region from 323 K to 1073 K. The electrical transport behaviors of the samples are dominated by the…
We report Electron Paramagnetic Resonance measurements on single crystalline and powder samples of Nd_0.5Ca_0.5MnO_3 across the charge-ordering transition at T_co=240 K down to the antiferromagnetic ordering transition at T_N = 140 K. The…
Pr$_{1-x}$Ca$_x$Ba$_2$Cu$_3$O$_{7-\delta}$($x\approx$0.5) thin films have been grown on SrTiO$_3$ and YSZ substrates by the pulsed laser ablation. The substrate temperature dependence of orientation and superconducting poperties were…
Transition metal oxides are promising candidates for thermoelectric applications, because they are stable at high temperature and because strong electronic correlations can generate large Seebeck coefficients, but their thermoelectric power…
The magnetic and magnetotransport properties of metallic 1$T$-VTe$_{2}$ single crystals were investigated at temperatures from 1.3 to 300 K and in magnetic fields up to 35 T. Upon applying a high magnetic field, it is found that the…
High transition temperature (high-Tc) superconductivity is associated with layered crystal structures. This work considers superconductivity in ultra-thin crystals (of thickness equal to the transverse structural periodicity distance d for…
Low resistivity (~3-24 mOhm.cm) with tunable n- and p-type phase pure Cu2O thin films have been grown by pulsed laser deposition at 25-200 0C by varying the background oxygen partial pressure (O2pp). Capacitance data obtained by…
The ac electrical transport properties of polycrystalline Pr$_2$MgZrO$_6$ (PMZ) have been investigated using conductivity and impedance spectroscopic techniques. The crystal structure of PMZ has been determined to be monoclinic through a…
We report a study of selenospinel Cu$_{6-x}$Fe$_{4+x}$Sn$_{12}$Se$_{32}$ ($x$ = 0, 1, 2) single crystals, which crystalize in a cubic structure with the $Fd\overline{3}m$ space group, and show typical semiconducting behavior. The large…
The thermal conductivities of beta-Ga2O3 single crystals along four different crystal directions were measured in the temperature range of 80-495K using the time domain thermoreflectance (TDTR) method. A large anisotropy was found. At room…
Building up a solid-state material from quantum dots (QD), which are often referred to as artificial atoms, offers the potential to create new materials with unprecedented macroscopic properties. The investigation of the electronic…
Single crystals of Cu$_{13}$Ba were successfully grown out of Ba-Cu self flux. Temperature dependent magnetization, $M(T)$, electrical resistivity, $\rho(T)$, and specific heat, $C_p(T)$, data are reported. Isothermal magnetization…
The electronic structure of La0.8Sr0..2MnO3/SrTiO thin film, which was prepared by Laser MBE, was studied by X-ray photoemission spectra (XPS) in the temperature interval of 300 to 1000 K. Experimental results showed that the electronic…
Epitaxial, n-type ZnO films grown by a laser molecular-beam epitaxy method were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about $n_s \sim 10^{16}$ cm$^{-3}$ and 440…
The temperature dependence of the electrical transport of a individual tin oxide nanobelt was measured, in darkness, from 400 to 5K. We found four intrinsic electrical transport mechanisms through the nanobelt. It starts with…
NiO is a promising p-type material for photovoltaics and power electronics, but its temperature limits remain unclear. Using in situ high-temperature X-ray diffraction (HT-XRD) from 30 to 1100 C, we track the structural evolution of NiO…
We report on the influence of the chemical composition on the electronic properties of molybdenum oxynitrides thin films grown by reactive sputtering on Si (100) substrates at room temperature. The partial pressure of Ar was fixed at 90 %,…