Related papers: Electrical spin injection and detection in Germani…
Spin injection efficiency based on conventional ferromagnet (or half-metallic ferromagnet) /semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors…
We report measurements of spin susceptibility of a two-dimensional hole gas confined at an GaAs/AlGaAs interface in density range from 2.8 x 10^10 to 6.5 x 10^10 cm-2. We used the method of spin polarization of carriers in parallel magnetic…
We investigate the spin transport and precession in graphene by using the Hanle effect in nonlocal and threeterminal measurement geometries. Identical spin lifetimes, spin diffusion lengths and spin polarizations are observed in graphene…
Noble-gas spins feature hours long coherence times owing to their great isolation from the environment, and find practical usage in various applications. However, this isolation leads to extremely slow preparation times, relying on weak…
Measurements and modeling of electron spin transport and dynamics are used to characterize hyperfine interactions in Fe/GaAs devices with $n$-GaAs channels. Ga and As nuclei are polarized by electrically injected electron spins, and the…
With nearly complete spin polarization, the ferromagnetic semiconductor europium monoxide could enable next-generation spintronic devices by providing efficient ohmic spin injection into silicon. Spin injection is greatly affected by the…
We experimentally study spin accumulation in an aluminium island with all dimensions smaller than the spin relaxation length, so that the spin imbalance throughout the island is uniform. Electrical injection and detection of the spin…
Our investigation reveals a groundbreaking discovery of a negative inverse orbital Hall effect (IOHE) in Ge thin films. We employed the innovative orbital pumping technique where spin-orbital coupled current is injected into Ge films using…
We demonstrate an electrically controlled high-spin (S=5/2) to low-spin (S=1/2) transition in a three-terminal device incorporating a single Mn2+ ion coordinated by two terpyridine ligands. By adjusting the gate-voltage we reduce the…
We report a novel spin injection and detection mechanism via the anomalous Hall effect in a ferromagnetic metal. The anomalous spin Hall effect (ASHE) refers to the transverse spin current generated within the ferromagnet. We utilize the…
We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin…
We explore electrically injected, spin polarized transport in a ballistic two-dimensional electron gas. We augment the Buettiker-Landauer picture with a simple, but realistic model for spin-selective contacts to describe multimode…
Several spin-orbit effects allow performing spin to charge inter-conversion: the spin Hall effects, the Rashba effect, or the spin-momentum locking in topological insulators. Here we focus on how the detection of this inter-conversion can…
We report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(100) in an external magnetic field is…
The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in…
We report electrical measurements of the current-induced spin polarization of the surface current in topological insulator devices where contributions from bulk and surface conduction can be disen- tangled by electrical gating. The devices…
Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating…
We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si…
The use of the spin Hall effect and its inverse to electrically detect and manipulate dynamic spin currents generated via ferromagnetic resonance (FMR) driven spin pumping has enabled the investigation of these dynamically injected currents…
Electrical spin injection and transport in silicon are central challenges for realizing semiconductor-based spintronic devices, particularly in p-type Si, where strong spin relaxation and interface effects often suppress detectable spin…