Related papers: Electrical spin injection and detection in Germani…
We derive diffusion equations, which describe spin-charge coupled transport on the helical metal surface of a three-dimensional topological insulator. The main feature of these equations is a large magnitude of the spin-charge coupling,…
Hole spin qubits in Ge/GeSi heterostructures benefit from the clean environment of epitaxial interfaces and from the intrinsic spin-orbit coupling that enables efficient electrical control, which makes them promising candidates for quantum…
An investigation was carried out into the effect of spin drift on spin accumulation signals in highly-doped Si using non-local 4-terminal (NL-4T) and 3-terminal (NL-3T) methods. The spin signals in the NL-4T scheme were not affected by spin…
The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this phenomenon. In this work we show that this feature can…
Two-dimensional electron gas (2DEG) formed at the interface between SrTiO3 (STO) and LaAlO3 (LAO) insulating layer is supposed to possess strong Rashba spin-orbit coupling. To date, the inverse Edelstein effect (i.e. spin-to-charge…
We have fabricated nanometer sized magnetic tunnel junctions using a new nanoindentation technique in order to study the transport properties of a single metallic nanoparticle. Coulomb blockade effects show clear evidence for single…
We present measurements of thermal and electrical spin injection in nanoscale metallic non-local spin valve (NLSV) structures. Informed by measurements of the Seebeck coefficient and thermal conductivity of representative films made using a…
We investigate the origin of purported "spin accumulation" signals observed in local "three-terminal" (3T) measurements of ferromagnet/insulator/n-Si tunnel junctions using inelastic electron tunneling spectroscopy (IETS). Voltage bias and…
Understanding the flow of spins in magnetic layered structures has enabled an increase in data storage density in hard drives over the past decade of more than two orders of magnitude1. Following this remarkable success, the field of…
Many experiments have shown the detection of spin-currents driven by radio-frequency spin pumping from yttrium iron garnet (YIG), by making use of the inverse spin-Hall effect, which is present in materials with strong spin-orbit coupling,…
We present a novel approach to study the spin and symmetry electronic properties of buried interfaces using low-energy spin-resolved photoemission spectroscopy. We show that this method is sensitive to interfaces buried below more than 20ML…
We report on experiments in which a spin-polarized current is injected from a $GaMnAs$ ferromagnetic electrode into a $GaAs$ quantum well through an AlAs barrier. The resulting spin polarization in the GaAs well is detected by measuring how…
All-electrical writing and reading of spin states attract considerable attention for their promising applications in energy-efficient spintronics devices. Here we show, based on rigorous first-principles calculations, that the spin…
The intrinsic spin Hall conductivity of typical topological insulators Sb$_2$Se$_3$, Sb$_2$Te$_3$, Bi$_2$Se$_3$, and Bi$_2$Te$_3$ in the bulk form, is calculated from first-principles by using density functional theory and the linear…
Graphene is a promising platform for spin-based non-volatile memory, logic, and neuromorphic computing by combining long-distance spin transport with electrical tunability at room temperature. However, advancing beyond passive spin channels…
An electron interferometer was designed and fabricated via a normal metal/insulator/ferromagnet non-local lateral spin valve with a ring-shaped normal metal/insulator spacer, and spin current interference was observed. A very high spin…
Germanium (Ge) quantum wells are emerging as versatile platforms for quantum devices, supporting high-quality spin qubits and integration with superconducting leads. These applications benefit from strong intrinsic spin-orbit interaction…
We combine Z-contrast scanning transmission electron microscopy with density-functional-theory calculations to determine the atomic structure of the Fe/AlGaAs interface in spin-polarized light-emitting diodes. A 44% increase in…
We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the…
We present experimental results of transverse electron focusing measurements performed on an n-type GaAs based mesoscopic device consisting of one-dimensional (1D) quantum wires as injector and detector. We show that non-adiabatic injection…