Related papers: Geometrical effects on spin injection: 3D spin dri…
Proximity effects allow for the adjustment of magnetic properties in a physically elegant way. If two thin ferromagnetic (FM) films are brought into contact, electronic coupling alters their magnetic exchange interaction at their interface.…
Two-dimensional (2D) van der Waals heterostructures serve as a promising platform to exploit various physical phenomena in a diverse range of novel spintronic device applications. The efficient spin injection is the prerequisite for these…
We study theoretically the effective spin Hall properties of a composite consisting of two materials with and without spin-orbit (SO) coupling. In particular, we assume that SO material represents a system of grains in a matrix with no SO.…
The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…
We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the…
Direct detection experiments aimed at uncovering the elusive nature of dark matter (DM) have made significant progress in probing ever lower cross-sections for DM-nucleon interactions. At the same time, an upper limit in the cross-section…
Recent experimental breakthroughs have demonstrated that the electron spin in silicon can be reliably injected and detected as well as transferred over distances exceeding 1 mm. We propose an on-chip communication paradigm which is based on…
We report on electrical spin injection measurements on MWNTs . We use a ferromagnetic alloy Pd$_{1-x}$Ni$_{x}$ with x $\approx$ 0.7 which allows to obtain devices with resistances as low as 5.6 $k\Omega$ at 300 $K$. The yield of device…
We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into…
We study theoretically the quantum size effects of a magnetic resonant tunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that…
The spin injection and accumulation in metallic lateral spin valves with transparent interfaces is studied using d.c. injection current. Unlike a.c.-based techniques, this allows investigating the effects of the direction and magnitude of…
Little is known about the spin-flip diffusion length $l_{\rm sf}$, one of the most important material parameters in the field of spintronics. We use a density-functional-theory based scattering approach to determine values of $l_{\rm sf}$…
We theoretically study the spin-dependent transport in a ferromagnet/superconductor/ferro-magnet double barrier tunnel junction. The spin-polarized tunneling currents give rise to spin imbalance in the superconductor. The resulting…
We characterize the spin injection into bilayer graphene fully encapsulated in hBN using trilayer (3L) hexagonal boron nitride (hBN) tunnel barriers. As a function of the DC bias, the differential spin injection polarization is found to…
We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g. fringe fields, etc.), and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3…
The problem of electron tunnelling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The $k^3$ Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to…
Transition metal dichalcogenides (TMDs) have emerged as a promising class of materials for spintronics, with the aim of promoting efficient spin-charge conversion (SCC) in TMD/ferromagnet (FM)-based devices. The MoTe$_2$ semimetal with…
We present a study of dynamical spin injection from a three-dimensional ferromagnet into two-dimensional single-layer graphene. Comparative ferromagnetic resonance (FMR) studies of ferromagnet/graphene strips buried underneath the central…
The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…