Related papers: Geometrical effects on spin injection: 3D spin dri…
We show that the surface states of pristine 3D topological insulators (TIs) are analogs of ferromagnetic half metals due to complete polarization of an emergent momentum independent pseudospin (SU(2)) degree of freedom on the surface. To…
We study the spin-dependent transmission through interfaces between a HgTe/CdTe quantum well (QW) and a metal - both for the normal metal and the superconducting case. Interestingly, we discover a new type of spin Hall effect at these…
We demonstrate spin injection into a graphene thin film with high reliability by using non-local magnetoresistance (MR) measurements, in which the electric current path is completely separated from the spin current path. Using these…
We study spin transport of holes through stubless or stubbed waveguides modulated periodically by diluted magnetic semiconductor (DMS) sections of width b1 . Injected holes of up (down) spin feel a periodically modulated barrier (well)…
With nearly complete spin polarization, the ferromagnetic semiconductor europium monoxide could enable next-generation spintronic devices by providing efficient ohmic spin injection into silicon. Spin injection is greatly affected by the…
The spin-transfer in biased disordered ferromagnet (F) - normal metal (N) systems is calculated by the diffusion equation. For F1-N2-F2 and N1-F1-N2-F2-N3 spin valves, the effect of spin-flip processes in the normal metal and ferromagnet…
We provide a theoretical description of diffusive charge and spin transport in hybrid devices containing altermagnets. Based on recently derived drift--diffusion equations for coupled charge and spin dynamics and general boundary…
Materials with strong spin orbit coupling (SOC) are essential for realizing spin orbit torque (SOT) based magnetic memory devices. Transition metal dichalcogenides (TMDs) are promising candidates for such appli cations because of their…
Spatial and time scales of spin density fluctuations (SDF) were analyzed in 3d ferromagnets using ab initio linear response calculations of complete wavevector and energy dependence of the dynamic spin susceptibility tensor. We demonstrate…
In this letter, we report a three-dimensional (3D) quantum mechanical simulation to investigate the effects of surface roughness scattering (SRS) on the device characteristics of Si nanowire transistors (SNWTs). We treat the microscopic…
We develop a Monte Carlo model to study injection of spin-polarized electrons through a Schottky barrier from a ferromagnetic metal contact into a non-magnetic low-dimensional semiconductor structure. Both mechanisms of thermionic emission…
Two-dimensional (2D) materials are promising candidates for spintronic applications. Maintaining their atomically smooth interfaces during integration of ferromagnetic (FM) electrodes is crucial since conventional metal deposition tends to…
We envision that quantum spin Hall effect should be observed in $(111)$-oriented thin films of SnSe and SnTe topological crystalline insulators. Using a tight-binding approach supported by first-principles calculations of the band…
We exploit the geometry of magnetic nanowires, which define 1D contacts to an encapsulated graphene channel, to introduce an out-of-plane component in the polarisation of spin carriers. By design, the magnetic nanowires traverse the angled…
We report a study of spin waves in hole-doped ferromagnetic La7/8Sr1/8MnO3, in the metallic state (165K) below TC (181K) and through the puzzling metal-insulator transition which occurs at TO'O''=159K. They reveal very unusual excitations.…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
We explore the spin superfluid transport in exchange interaction dominated three-sublattice antiferromagnets. The system in the long-wavelength regime is described by an $SO(3)$ invariant field theory. Additional corrections from…
Inducing sizable spin--orbit interactions in graphene by proximity effect is establishing as a successful route to harnessing two-dimensional Dirac fermions for spintronics. Semiconducting transition metal dichalcogenides (TMDs) are an…
Diodes are key elements for electronics, optics, and detection. The search for a material combination providing the best performances for the required application is continuously ongoing. Here, we present a superconducting spintronic tunnel…
Spin-dependent transport is investigated in ballistic regime through the interface between a ferromagnet and a spin spiral. We show that spin-dependent interferences lead to a new type of diffraction called "spin-diffraction". It is shown…