Related papers: Geometrical effects on spin injection: 3D spin dri…
The 2D ferromagnets, such as CrX3 (X=Cl, Br and I), have been attracting extensive attentions since they provide novel platforms to fundamental physics and device applications. Integrating CrX3 with other electrodes and substrates is an…
We propose the two-band s-d model to describe theoretically a diffuse regime of the spin-dependent electron transport in magnetic tunnel junctions (MTJ's) of the form F/O/F where F's are 3d transition metal ferromagnetic layers and O is the…
An understanding of the pinning of magnetic skyrmions to defects is crucial for the development of future spintronic applications. While pinning is desirable for a precise positioning of magnetic skyrmions it is detrimental when they are to…
The behavior of spin propagation in metals in various measurement schemes is shown to be qualitatively different than a simple exponential decay - due to the backflow effect on spin diffusion in the presence of interfaces. To probe this…
We theoretically investigate the mechanism to generate large intrinsic spin Hall effect in iridates or more broadly in 5d transition metal oxides with strong spin-orbit coupling. We demonstrate such a possibility by taking the example of…
The so-called spin-orbit proximity effect experimentally realized in graphene (G) on several different heavy metal surfaces opens a new perspective to engineer the spin-orbit coupling (SOC) for new generation spintronics devices. Here, via…
We present an in-depth study of the spin-orbit (SO) interactions occurring in inversion-asymmetric two-dimensional hole gases at semiconductor heterointerfaces. We focus on common semiconductors such as GaAs, InAs, InSb, Ge, and Si. We…
Spintronics is a new paradigm for integrated digital electronics. Recently established as a niche for nonvolatile magnetic random access memory (MRAM), it offers new functionality while demonstrating low power and high speed performance.…
We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin…
The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…
We report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(100) in an external magnetic field is…
We report on experiments of spin filtering through ultra-thin single-crystal layers of the insulating and ferromagnetic oxide BiMnO3 (BMO). The spin polarization of the electrons tunneling from a gold electrode through BMO is analyzed with…
We demonstrate the spin valve effect by ballistic transport in fully epitaxial MnAs ferromagnetic metal / GaAs semiconductor / GaAs:MnAs granular hybrid heterostructures. The GaAs:MnAs material contains ferromagnetic MnAs nanoparticles in a…
The spin and charge transport in materials with spin-dependent conductivity has been studied. It was shown that there is a charge accumulation along spin diffusion in a ferromagnetic metal, which causes a shortening of the spin diffusion…
Efficient injection of spin-polarized electrons into the conduction band of silicon is limited by the formation of a silicide at the ferromagnetic metal (FM)/silicon interface. In the present work, this "magnetically-dead" silicide (where…
We observed spin injection into silicon through Fe/MgO tunnel barrier by using non-local magnetoresistance measurement technique. Fe/MgO tunnel barrier contacts with a lateral spin valve structure were fabricated on phosphorous doped…
We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and…
We calculate the properties of the 4$d$ ferromagnet SrRuO$_3$ in bulk and thin film form with the aim of understanding the experimentally observed metal to insulator transition at reduced thickness. Although the spatial extent of the 4$d$…
Spin-dependent tunneling through a symmetric semiconductor barrier is studied including the k^3 Dresselhaus effect. The spin-dependent transmission of electron can be obtained analytically. By comparing with previous work(Phys. Rev. B 67.…
We construct a spin-drift-diffusion model to describe spin-polarized electron transport in zincblende semiconductors in the presence of magnetic fields, electric fields, and off-diagonal strain. We present predictions of the model for…