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We study the spin dependent tunneling of electrons through a zinc-blende semiconductor with the indirect X (or D) minimum serving as the tunneling barrier. The basic difference between tunneling through the G vs. the X barrier is the…

Materials Science · Physics 2009-11-11 Subodha Mishra , Sunita Thulasi , Sashi Satpathy

Spin-phonon interaction plays an important role in 2D magnetic materials and motivates the development of next-generation spin- and charge-dependent microelectronic devices. Understanding the spin-phonon interaction by tuning the growth…

Spin Hall effect provides an efficient tool for the conversion of a charge current into a spin current, opening the possibility of producing pure spin currents in non-magnetic materials for the next generation of spintronics devices. In…

Ferromagnetic metals, with the potential to generate spin current with unconventional spin polarization via the spin Hall effect, offer promising opportunities for field-free switching of perpendicular magnetization and for the spin-orbit…

Materials Science · Physics 2025-01-03 Fanxing Zheng , Jianting Dong , Yizhuo Song , Meng Zhu , Xinlu Li , Jia Zhang

We report detailed transport studies on ferromagnet-superconductor heterostructures. Epitaxial heterostructures of half-metal colossal magnetoresistive La2/3Ca1/3MnO3 (HM-CMR) and high Tc superconducting YBa2Cu3O7 (YBCO) are grown on SrTiO3…

Superconductivity · Physics 2009-11-11 S. Soltan , J. Albrecht , H. -U. Habermeier

Lack of inversion symmetry at a metallic surface can lead to an observable spin-orbit interaction. For certain metal surfaces, such as the Au(111) surface, the experimentally observed spin-orbit coupling results in spin rotation lengths on…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 Jamie D. Walls , Eric J. Heller

We consider spin and charge flow in normal metals. We employ the Keldysh formalism to find transport equations in the presence of spin-orbit interaction, interaction with magnetic impurities, and non-magnetic impurity scattering. Using the…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 R. V. Shchelushkin , Arne Brataas

$\text{RuO}_2$, a transition metal oxide, is attracting attention in spintronics for its unique altermagnetic properties, which influence spin currents. Its ability to produce large spin-orbit torques and spin Hall effects is key for…

Materials Science · Physics 2024-08-20 Abhisek Mishra , Kshitij Singh Rathore , Swayang Priya Mahanta , Subhankar Bedanta

We study theoretically the spin transport in a nonmagnetic metal connected to ferromagnetic injector and detector electrodes. We derive a general expression for the spin accumulation signal which covers from the metallic to the tunneling…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 S. Takahashi , S. Maekawa

An electrically conductive metal typically transmits or absorbs a spin current. Here, we report on evidence that interfacing two metal thin films can suppress spin transmission and absorption. We examine spin pumping in…

We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/YIG) and normal…

Mesoscale and Nanoscale Physics · Physics 2016-12-30 Seulgi Ok , Wei Chen , Manfred Sigrist , Dirk Manske

In the normal metal/ferromagnetic insulator bilayer (such as Pt/Y$_{3}$Fe$_{5}$O$_{12}$) and the normal metal/ferromagnetic metal/oxide trilayer (such as Pt/Co/AlO$_{x}$) where spin injection and ejection are achieved by the spin Hall…

Mesoscale and Nanoscale Physics · Physics 2015-11-24 Wei Chen , Manfred Sigrist , Jairo Sinova , Dirk Manske

The spin-transfer effect has been studied in magnetic tunnel junctions (PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe) with dimensions down to 0.1x0.2 um2 and resistance-area product RA in the range of 0.5-10 Ohm m2 (dR/R=1-20%). Current-induced…

Other Condensed Matter · Physics 2009-11-11 Yiming Huai , Frank Albert , Paul Nguyen , Mahendra Pakala , Thierry Valet

We report that an ultra-thin, post-oxidized aluminum epilayer grown on the AlGaAs surface works as a high-quality tunnel barrier for spin injection from a ferromagnetic metal to a semiconductor. One of the key points of the present…

Materials Science · Physics 2013-06-26 N. Nishizawa , H. Munekata

We present a consistent microscopic study of spin pumping effects for both metallic and insulating ferromagnets. As for metallic case, we present a simple quantum mechanical picture of the effect as due to the electron spin flip as a result…

Mesoscale and Nanoscale Physics · Physics 2017-08-22 Gen Tatara , Shigemi Mizukami

We address the problem of barrier tunneling in the two-dimensional T_3 lattice (dice lattice). In particular we focus on the low-energy, long-wavelength approximation for the Hamiltonian of the system, where the lattice can be described by…

Mesoscale and Nanoscale Physics · Physics 2011-09-29 D. F. Urban , D. Bercioux , M. Wimmer , W. Häusler

We study the spin polarization of tunneling holes injected from ferromagnetic GaMnAs into a p-doped semiconductor through a tunneling barrier. We obtain an upper limit to the spin injection rate. We find that spin-orbit interaction…

Mesoscale and Nanoscale Physics · Physics 2016-08-31 L. Brey , J. Fernandez-Rossier , C. Tejedor

We have investigated spin Hall effects in 4$d$ and 5$d$ transition metals, Nb, Ta, Mo, Pd and Pt, by incorporating the spin absorption method in the lateral spin valve structure; where large spin current preferably relaxes into the…

Mesoscale and Nanoscale Physics · Physics 2015-05-19 M. Morota , Y. Niimi , K. Ohnishi , T. Tanaka , H. Kontani , T. Kimura , Y. Otani

We present a unified theory of charge carrier transport in 2D Dirac systems with broken mirror inversion and time-reversal symmetries (e.g., as realized in ferromagnetic graphene). We find that the entanglement between spin and pseudospin…

Mesoscale and Nanoscale Physics · Physics 2018-09-21 Manuel Offidani , Aires Ferreira

We suggest a consistent microscopic theory of spin injection from a ferromagnet (FM) into a semiconductor (S). It describes tunneling and emission of electrons through modified FM-S Schottky barrier with an ultrathin heavily doped…

Materials Science · Physics 2009-11-10 V. V. Osipov , A. M. Bratkovsky
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