Related papers: Tensile-Strained Germanium-on-Insulator Substrate …
We report the fabrication and characterization of an electrostatic quantum dot in pure Germanium with an integrated charge measurement transistor. The device uses the Al2O3/Germanium interface for the confinement of carriers in the…
This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of…
Germanium-tin (GeSn) photodiodes potentiate a viable solution to integrate SWIR and extended SWIR detection technology into CMOS processing line. However, challenges in the growth of thick, high quality GeSn limit the device absorber…
We report the first empirical efficiency measurement of germanium-based thermophotovoltaic devices under high-temperature, high-irradiance conditions using a high view-factor calorimetric setup. Two TPV cell architectures were fabricated on…
Silicon optics with wide bandwidth anti-reflection (AR) coatings, made of multi-layer textured silicon surfaces, are developed for millimeter and submillimeter wavelengths. Single and double layer AR coatings were designed for an optimal…
Hybrid superconductor-topological insulator (TI) nanostructures constitute a promising materials platform for exploring proximity-induced superconductivity in systems with topologically protected surface states. A key obstacle has been the…
We describe a method with which to fabricate sub-micron mechanical structures from silicon-on-insulator substrates. We believe this is the first reported method for such fabrication, and our technique allows for complex, multilayer electron…
The development of manufacturable and scalable integrated nonlinear photonic materials is driving key technologies in diverse areas such as high-speed communications, signal processing, sensing, and quantum information. Here, we demonstrate…
Epitaxial semiconducting NiYBi thin films were directly prepared on MgO(100) substrates by magnetron sputtering. The intensity ratio of the (200) and (400) diffraction peaks, I(200)/I(400) = 2.93, was close to the theoretical value (3.03).…
High quality semipolar and nonpolar GaN is crucial in achieving high-performance GaN-based optoelectronic devices, yet it has been very challenging to achieve large-area wafers that are free of basal-plane stacking faults (BSFs). In this…
Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfils…
Topological insulators are immensely investigated for their surface states related properties as these materials can be used for various spintronics, quantum computing, and optoelectronics applications. In this perspective, different…
Zero-index materials exhibit exotic optical properties that can be utilized for integrated-optics applications. However, practical implementation requires compatibility with complementary metallic-oxide-semiconductor (CMOS) technologies. We…
Dielectric integration of layered semiconductors is a prerequisite for fabricating high-quality optoelectronic, valleytronic, and quantum-photonic devices. While hexagonal boron nitride (hBN) is the current benchmark dielectric, exploration…
The prospects of using nanofilms of indium-containing III-V semiconductors, gold and single-layer graphene in magnetic field sensors, intended for application in radiation environment were evaluated on the results of testing in neutron…
Active microelectromechanical systems can couple the nanomechanical domain with the electronic domain by integrating electronic sensing and actuation mechanisms into the micromechanical device. This enables very fast and sensitive…
Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In materials integra-tion, strain is typically tuned through…
We report the design, fabrication and characterization of evanescent mid-infrared germanium-on-silicon waveguide sensors for therapeutic drug monitoring (TDM). TDM requires rapid and accurate quantification of serum drug levels but existing…
Quantum materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond conventional semiconductor transistors. Devices that take…
Thallium-doped cesium iodide (CsI(Tl)) screens are widely used in X-ray imaging devices because of the columnar structure of CsI(Tl) layer, but few reports focus on the optical role of the substrate in the screen system. In this paper, four…