Related papers: A Feedback Spin-Valve Memristive System
Recently, in addition to the well-known resistor, capacitor and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale…
Memristive systems are generalisations of memristors, which are resistors with memory. In this paper, we present a quantum description of memristive systems. Using this model we propose and experimentally demonstrate a simple and practical…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…
The memristive device is one of the basic elements of novel, brain-inspired, fast, and energy-efficient information processing systems in which there is no separation between memorization and information analysis functions. Since the first…
Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high…
A spin-polarized current transfers its spin-angular momentum to a local magnetization, exciting current-induced magnetization dynamics. So far, most studies in this field have focused on the direct effect of spin transport on magnetization…
Non-equilibrium systems display memory, a dependence not merely on their present environment but on previously applied fields. Multistable systems such as spin glasses, martensites and granular matter have exponentially many microstates…
This short note clarifies that the "pinched hysteresis loop" fingerprint of a memristor, or a memristive device, must hold for all amplitudes, for all frequencies, and for all initial conditions, of any periodic testing waveform, such as…
In the present work, we consider nonlinear control systems for which there exist structural obstacles to the design of classical continuous backstepping feedback laws. We conceive feedback laws such that the origin of the closed-loop system…
We study the classical dynamics of resonantly modulated large-spin systems in a strong magnetic field. We show that these systems have special symmetry. It leads to characteristic nonlinear effects. They include abrupt switching between…
Neuromorphic circuits mimic partial functionalities of brain in a bio-inspired information processing sense in order to achieve similar efficiencies as biological systems. While there are common mathematical models for neurons, which can be…
We propose a mechanism for negative isotropic magnetoresistance in the hopping regime. It results from a memory effect encrypted into spin correlations that are not taken into account by the conventional theory of hopping conductivity. The…
We investigate the spin Hall effect in ballistic chaotic quantum dots with spin-orbit coupling. We show that a longitudinal charge current can generate a pure transverse spin current. While this transverse spin current is generically…
The design of robust orbitally stabilizing feedback is considered. From a known orbitally stabilizing controller for a nominal, disturbance-free system, a robustifying feedback extension is designed utilizing the sliding-mode control (SMC)…
In pursuit of neuromorphic (brain-inspired) devices, memristors (memory-resistors) have emerged as effective components for emulating neuronal circuitry. Here we formally define a class of Simple Volatile Memristors (SVMs) based on a simple…
Conventional computer electronics creates a dichotomy between how information is processed and how it is stored. Silicon chips process information by controlling the flow of charge through a network of logic gates. This information is then…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…
Synchronization of large spin Hall nano-oscillators (SHNO) arrays is an appealing approach toward ultra-fast non-conventional computing based on nanoscale coupled oscillator networks. However, for large arrays, interfacing to the network,…
The possibility of in-memory computing with volatile memristive devices, namely, memristors requiring a power source to sustain their memory, is demonstrated. We have adopted a hysteretic graphene-based field emission structure as a…
This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A…