Related papers: A Feedback Spin-Valve Memristive System
The writing process of SOT-MRAMs is considered deterministic when additional symmetry-breaking factors, such as the application of an external magnetic field aligned with the current, are present. Notably, the write probability exhibits a…
We develop a theory for spin transport and magnetization dynamics in a quantum-dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate…
Spin-memristors are a class of materials that can store memories through the control of spins, potentially leading to novel technologies that address the constraints of standard silicon electronics, thereby facilitating the advancement of…
We propose a superconducting spin-triplet valve, which consists of a superconductor and an itinerant magnetic material, with the magnet showing an intrinsic non-collinear order characterized by a wave vector that may be aligned in a few…
In a quantum Hall ferromagnet, the spin polarization of the two-dimensional electron system can be dynamically transferred to nuclear spins in its vicinity through the hyperfine interaction. The resulting nuclear field typically acts back…
We present a theory of magnetotransport through an electronic orbital, where the electron spin interacts with a (sufficiently) large external spin via an exchange interaction. Using a semiclassical approximation, we derive a set of…
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…
In metallic systems with spin-orbit coupling a longitudinal charge current may generate a transverse pure spin current; vice-versa an injected pure spin current may result in a transverse charge current. Such direct and inverse spin Hall…
We examine a possible spin Hall effect for localized spin systems with no charge degrees of freedom. In this scenario, a longitudinal magnetic field gradient induces a transverse spin current carried by spin wave excitations with an…
The spin density matrix for spin-3/2 hole systems can be decomposed into a sequence of multipoles which has important higher-order contributions beyond the ones known for electron systems [R. Winkler, Phys. Rev. B \textbf{70}, 125301…
We discuss classical dynamics of electron spin in two-dimensional semiconductors with a spin-split spectrum. We focus on a special case, when spin-orbit induced random magnetic field is directed along a fixed axis. This case is realized in…
Magnetoresistance (MR) provides a crucial tool for experimentally studying spin torques. While MR is well established in the device geometry of the spin Hall effect (SHE), as exemplified by the magnet/heavy-metal heterostructures, its role…
One of the major approaches to neuromorphic computing is using memristors as analogue synapses. We propose unitary quantum gates that exhibit memristive behaviours, including Ohm's law, pinched hysteresis loop and synaptic plasticity.…
The search for superconducting systems exhibiting nonreciprocal transport and, specifically, the diode effect, has proliferated in recent years. This trend encompasses a wide variety of systems, including planar hybrid structures,…
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a…
A model of a spin valve in which electron transport between the magnetized electrodes is due to multistep tunneling is analyzed. Motivated by recent experiments on organic spin valves, we assume that spin memory loss in the course of…
Memristors are emerging as key electronic components that retain resistance states without power. Their non-volatile nature and ability to mimic synaptic behavior make them ideal for next-generation memory technologies and neuromorphic…
Information processing and storing by the same physical system is emerging as a promising alternative to traditional computing platforms. In turn, this requires the realization of elementary units whose memory content can be easily tuned…
We consider nonlinear control systems for which there exist some structural obstacles to the design of classical continuous stabilizing feedback laws. More precisely, it is studied systems for which the backstepping tool for the design of…
A ringing free bit addressing scheme for magnetic memories like MRAM (magnetic random access memory) is proposed. As in standard MRAM addressing schemes the switching of a selected cell is obtained by the combination of two half-select…