Related papers: Engineering a robust quantum spin Hall state in gr…
Two-dimensional topological insulators (2DTIs), which host the quantum spin Hall (QSH) effect, are one of the key materials in next-generation spintronic devices. To date, experimental evidence of the QSH effect has only been observed in a…
Quantum spin Hall edge transport in two-dimensional transition-metal dichalcogenides depends on whether their one-dimensional edge channels are preserved under realistic substrates and device boundaries. Here we implement spin-orbit…
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…
Two-dimensional (2D) materials for their versatile band structures and strictly 2D nature have attracted considerable attention over the past decade. Graphene is a robust material for spintronics owing to its weak spin-orbit and hyperfine…
The unique properties of spin-polarized surface or edge states in topological insulators (TIs) make these quantum coherent systems interesting from the point of view of both fundamental physics and their implementation in low power…
Topological materials exhibit protected edge modes that have been proposed for applications in for example spintronics and quantum computation. While a number of such systems exist, it would be desirable to be able to test theoretical…
While two-dimensional topological insulators (2D TI) initiated the field of topological materials, only very few materials were discovered to date and the direct access to their quantum spin Hall edge states has been challenging due to…
We introduce a novel two-dimensional electronic system with ultrastrong interlayer interactions, namely twisted bilayer graphene with a large twist angle, as an ideal ground for realizing interlayer-coherent excitonic condensates. In these…
Magic-angle helical trilayer graphene relaxes into commensurate moir\'e domains, whose topological and well-isolated set of narrow bands possess ideal characteristics for realizing robust correlated topological phases, compared with other…
Quantum materials combining magnetism and topological fermions are a key platform for low-energy electronics, spintronics, and quantum phases that break time-reversal symmetry (TRS), such as the quantum anomalous Hall effect (QAHE).…
An acoustic topological insulator (TI) is synthesized using topology optimization, a free material inverse design method. The TI appears spontaneously from the optimization process without imposing requirements on the existence of pseudo…
Titanium (Ti) is an adhesion and contact metal commonly used in nanoelectronics and two-dimensional (2D) materials research. However, when Ti is deposited on graphene (Gr), we obtain dramatically different film morphology depending on the…
We report transport studies on a three dimensional, 70 nm thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semi-metallic HgTe, which thus becomes a three dimensional…
Topological insulators (TIs) are characterized by an insulating bulk and symmetry protected bound state on their boundaries. A "strong" topological insulator is characterized by robust conducting states on \emph{all} boundaries protected by…
We present evidence of topological surface states in beta-Ag2Te through first-principles calculations and periodic quantum interference effect in single crystalline nanoribbon. Our first-principles calculations show that beta-Ag2Te is a…
Topologically protected gapless edge states are phases of quantum matter which behave as massless Dirac fermions, immunizing against disorders and continuous perturbations. Recently, a new class of topological insulators (TIs) with…
Robustness of helical edge states in 2D topological insulators (TI) against strong interactions remains an intriguing issue. Here, by performing the first sign-free quantum Monte Carlo (QMC) simulation of the Kane-Mele-Hubbard-Rashba model…
Graphene is a sturdy and chemically inert material exhibiting an exposed two-dimensional electron gas of high mobility. These combined properties enable the design of graphene composites either based on covalent or non- covalent coupling of…
Quantum materials such as Topological Insulators (TI) have been promising due to diverse applications of their robust surface/edge states in the bulk (3D) and two-dimensional (2D) regime. Such conducting surface states in 3D systems, host…
The speed of silicon-based transistors has reached an impasse in the recent decade, primarily due to scaling techniques and the short-channel effect. Conversely, graphene (a revolutionary new material possessing an atomic thickness) has…