Related papers: Engineering a robust quantum spin Hall state in gr…
Graphene-based vertical heterostructures, particularly stacks incorporated with other layered materials, are promising for nanoelectronics. The stacking of two model Dirac materials, graphene and topological insulator, can considerably…
The quiet quantum environment of holes in solid-state devices has been at the core of increasingly reliable architectures for quantum processors and memories.1-6 However, due to the lack of scalable materials to properly tailor the valence…
Three-dimensional (3D) topological insulators (TIs) are known to carry 2D Dirac-like topological surface states in which spin-momentum locking prohibits backscattering. When thinned down to a few nanometers, the hybridization between the…
As one of the first proposed topologically protected states, the quantum spin Hall effect in graphene relies critically on the existence of a spin-dependent gap at the K/K' points of the Brillouin zone. Using a tight-binding formulation…
The hallmark property of two-dimensional topological materials is the incredible robustness of the quantized Hall conductivity to disorder. That robustness arises from the fact that in the topological band gap, transport can occur only…
Inducing superconducting correlations in chiral edge states is predicted to generate topologically protected zero energy modes with exotic quantum statistics. Experimental efforts to date have focused on engineering interfaces between…
Inverted HgTe/CdTe quantum wells have been used as a platform for the realization of 2D topological insulators, bulk insulator materials with spin-helical metallic edges states protected by time-reversal symmetry. This work investigates the…
We outline here how strong light-matter interaction can be used to induce quantum phase transition between normal and topological phases in two-dimensional topological insulators. We consider the case of a HgTe quantum well, in which band…
The notion of topological insulators (TIs), characterized by an insulating bulk and conducting topological surface states, can be extended to higher-order topological insulators (HOTIs) hosting gapless modes localized at the boundaries of…
A second-order topological insulator (SOTI) in $d$ spatial dimensions features topologically protected gapless states at its $(d-2)$-dimensional boundary at the intersection of two crystal faces, but is gapped otherwise. As a novel…
The quantum spin Hall insulators predicted ten years ago and now experimentally observed are instrumental for a breakthrough in nanoelectronics due to non-dissipative spin-polarized electron transport through their edges. For this transport…
Topological insulators (TIs) have been considered as promising candidates for next generation of electronic devices due to their topologically protected quantum transport phenomena. In this work, a scheme for atomic-scale field effect…
The major breakthroughs in the understanding of topological materials over the past decade were all triggered by the discovery of the Z$_2$ topological insulator (TI). In three dimensions (3D), the TI is classified as either "strong" or…
The modulation depth of 2-D electron gas (2DEG) based THz modulators using AlGaAs/GaAs heterostructures with metal gates is inherently limited to < 30%. The metal gate not only attenuates the THz signal (> 90%) but also severely degrades…
Quantum spin Hall insulators, or synonymously known as 2D topological insulators, are crucial 2D systems hosting topologically protected edge states. The working temperature of this topological quantum phase is dictated by the inverted…
Topological insulators (TIs) are promising for achieving dissipationless transport devices due to the robust gapless states inside the insulating bulk gap. However, currently realized 2D TIs, quantum spin Hall (QSH) insulators, suffer from…
We present numerical and analytical results for the optical and acoustic plasmon collective modes of coupled massless-Dirac two-dimensional electron systems. Our results apply to topological insulator (TI) thin films and to two graphene…
Topological states of matter have attracted a lot of attention due to their many intriguing transport properties. In particular, two-dimensional topological insulators (2D TI) possess gapless counter propagating conducting edge channels,…
Magic-angle twisted bilayer graphene has recently become a thriving material platform realizing correlated electron phenomena taking place within its topological flat bands. Several numerical and analytical methods have been applied to…
Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of…