Related papers: Si/SiGe quantum dot with superconducting single-el…

Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on…

We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a…

Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the…

Planar germanium is currently the only semiconducting platform where high-coherence spin qubits and proximity-induced superconductivity have each been demonstrated. Recent research into spin qubits in Ge/SiGe heterostructures has focused on…

We present a thermometry scheme to extract the temperature of a 2DEG by monitoring the charge occupation of a weakly tunnel-coupled 'thermometer' quantum dot using a quantum point contact detector. Electronic temperatures between 97 mK and…

We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5,400 is achieved by…

Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs,…

We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the…

We propose a nanoscale device consisting of a double quantum dot with strong intra- and inter- dot Coulomb repulsions. In this design, the current can only flow through the lower dot, but is triggered by the gate-controlled occupancy of the…

Quantum dots are nanostructures made of semiconducting materials that are engineered to hold a small amount of electric charge (a few electrons) that is controlled by external gate and may hence be considered as tunable artificial atoms. A…

We report on charge detection in electrostatically-defined quantum dot devices in bilayer graphene using an integrated charge detector. The device is fabricated without any etching and features a graphite back gate, leading to high quality…

We study low-temperature transport through a Coulomb blockaded quantum dot (QD) contacted by a normal (N), and a superconducting (S) electrode. Within an effective cotunneling model the conduction electron self energy is calculated to…

We study a superconducting single-electron transistor (SSET) which is coupled to a LC-oscillator via the phase difference across one of the Josephson junctions. This leads to a strongly anharmonic coupling between the SSET and the…

We report the fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe$_2$. The devices were operated with gates above and below the WSe$_2$ layer to accumulate a hole gas, which for some devices was…

We present an experimental realization of a Coulomb blockade refrigerator (CBR) based on a single - electron transistor (SET). In the present structure, the SET island is interrupted by a superconducting inclusion to permit charge transport…

An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO_2 interface near the MOSFET channel…

The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent…

Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of…

We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor (SET) fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the…

The shot noise of the current through a single electron transistor (SET), coupled capacitively with an electronic box, is calculated, using the master equation approach. We show that the noise may be sub-Poissonian or strongly…