Related papers: Surfactant mediated growth of Ti/Ni multilayers
In this work, we report the growth of a single mixed Bi$_{1-x}$Sb$_x$ layer, with diverse stoichiometries, on a Ag(111) substrate. The atomic geometry has been thoroughly investigated by low energy electron diffraction, scanning tunneling…
. We focused on the interaction between two ferromagnetic cobalt layers through a non-magnetic titanium layer. The magnetic properties of the structure were characterized by ferromagnetic resonance technique (FMR). The data were collected…
Integrating different semiconductor materials into an epitaxial device structure offers additional degrees of freedom to select for optimal material properties in each layer. However, interface between materials with different valences…
Molecular dynamics (MD) simulations were employed with empirical potentials to study the effects of multilayer interfaces and interface spacing in Al-Ti nanolayers. Several model interfaces derived from stacking of close-packed layers or…
All solid state Li-ion batteries employing metallic lithium as an anode offer higher energy densities while also being safer than conventional liquid electrolyte based Li-ion batteries. However, the growth of tiny filaments of lithium…
Sliding of two-dimensional materials is critical for their application as solid lubricants for space, and also relevant for strain engineering and device fabrication. Dopants such as Ni surprisingly improve lubrication in MoS$_2$, despite…
Using ab-initio calculations within the framework of Density Functional Theory (DFT), atomic structures and electronic properties of MoS2/HfO2 interface are investigated. The impact of interfacial oxygen concentration on the MoS2/HfO2…
Silver interlayers have been shown to enable smooth lithium deposition and cycling in anode-free solid-state batteries. Here, we report the atomic structure of the Ag and Li interface, showing that Li preferentially plates as FCC on both…
A multispecies diffuse interface model is formulated in a fluctuating hydrodynamics framework for the purpose of simulating surfactant interfaces at the nanoscale. The model generalizes previous work to ternary mixtures, employing a…
The stability of interfaces and the mechanisms of thin film growth on semiconductors are issues of central importance in electronic devices. These issues can only be understood through detailed study of the relevant microscopic processes.…
Combining topological insulators (TIs) and magnetic materials in heterostructures is crucial for advancing spin-based electronics. Magnetic insulators (MIs) can be deposited on TIs using the spin-spray process, which is a unique non-vacuum,…
Ion bombardment is known to enhance surface diffusion and affect the surface morphology. To quantify this phenomenon we calculate the ion-induced diffusion constant and its dependence on the ion energy, flux and angle of incidence. We find…
The ion-bombardment induced evolution of intermixing is studied by molecular dynamics simulations and by Auger electron spectroscopy depth profiling analysis (AESD) in Cu/Co multilayer. It has been shown that from AESD we can derive the…
The spreading dynamics of surfactant molecules on a thin fluid layer is of both fundamental and practical interest. A mathematical model formulated by Gaver and Grotberg 1990 describing the spreading of a single layer of insoluble…
We use density-functional theory to describe the initial stages of Fe film growth on GaAs(001), focusing on the interplay between chemistry and magnetism at the interface. Four features appear to be generic: (1) At submonolayer coverages, a…
We studied a system formed by a mixture of a thermoresponsive negatively charged graft copolymer (Alg-g-PNIPAAm) with a brush-type structure, and an oppositely charged surfactant (DTAB), in bulk and at the air-solution interface. We…
Ion irradiation during film growth has a strong impact on structural properties. Linear stability analysis is employed to study surface instabilities during ion-assisted growth of binary alloys. An interplay between curvature-dependent…
Atomic diffusion at nanometer length scale may differ significantly from bulk diffusion, and may sometimes even exhibit counterintuitive behavior. In the present work, taking Cu/Ni as a model system, a general phenomenon is reported which…
2H-TaS$_2$ few layers have been grown epitaxially onto GaN(0001). A high substrate growth temperature of 825$^{\circ}$C induces best structural properties of the overlayer, as revealed by in-situ electron diffraction (RHEED and LEED). The…
We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam…