Related papers: Surfactant mediated growth of Ti/Ni multilayers
We report on an XPS study of AlN thin films grown on Si(100) substrates by ion beam sputter deposition (IBSD) in reactive assistance of N+/N2+ ions to unravel the compositional variation of their surface when deposited at different…
The structural analysis of GaN and Al$_x$Ga$_{1-x}$N/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process, and in particular the incorporation of Al, the morphology…
High resolution transmission electron microscopy (HRTEM) and Rutherford backscattering spectrometry (RBS) are used to study the ion induced effects in Au, Ag nanostructures grown on Si and thermally grown SiO2 substrates. Au and Ag films…
A Ginzburg-Landau theory is presented on surfactants in polar binary mixtures, which aggregate at an interface due to the amphiphilic interaction. They can be ionic surfactants coexisting with counterions. Including the solvation and image…
We report the use of a surfactant molecule during the epitaxy of graphene on SiC(0001) that leads to the growth in an unconventional orientation, namely $R0^\circ$ rotation with respect to the SiC lattice. It yields a very high-quality…
The influence of growth interruption on the luminescence properties of the Ga(As,Sb)/GaAs interface have been studied by continous wave and time resolved photoluminescence spectrosocopy in type II Ga(As,Sb)/GaAs/(Ga,In)As double quantum…
The ion-bombardment induced evolution of intermixing is studied by molecular dynamics simulations and by Auger electron spectroscopy depth profiling analysis (AESD) in Cu/Co multilayer. It has been shown that from AESD we can derive the…
We investigate the influence of surfactants on stabilizing the formation of interfaces in solid-solid phase transitions. The analysis focuses on singularly perturbed van der Waals-Cahn-Hillard-type energies for gradient vector fields,…
We show that the ion beam induced incompressible amorphous solid flow in terms of advection transport mechanism leads to the erosion and deposition of atoms at the amorphous/crystalline (a/c) interface resulting in the formation of pattern…
We have presented the kinetic study of the very initial growth stages of an ultra thin film (40 $\AA$- 150$\AA$) of Ag sputter-deposited on Si(001) substrate containing native oxide using grazing incidence x-ray reflectivity (GIXR)…
The direct integration of GaN with Si can boost great potential for low-cost, large-scale, and high-power device applications. However, it is still challengeable to directly grow GaN on Si without using thick strain relief buffer layers due…
The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 $^{\circ}$C and 850 $^{\circ}$C. Epitaxial growth of NiO(111) with two…
We present a theory for the kinetics of surfactant adsorption at the interface between an aqueous solution and another fluid (air, oil) phase. The model relies on a free-energy formulation. It describes both the diffusive transport of…
Solid-melt interfaces play a pivotal role in governing crystal growth and metal-mediated epitaxy of gallium nitride (GaN) and other semiconductor materials. Using atomistic simulations based on machine-learning interatomic potentials…
In strained heteroepitaxy, two-dimensional (2D) layers can exhibit a critical thickness at which three-dimensional (3D) islands self-assemble, relieving misfit strain at the cost of an increased surface area. Here we show that such a…
Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V…
A mean field method to study heteroepitaxial thin film growth is applied to growth, intermixing and surface reconstructions of $Au$ on $Ag(110)$. The results are in accordance with experimentally observed ``burrowing'' at submonolayer…
Al/Ni multilayers have been prepared by repeated folding and cold rolling (F&R) of elemental foils. The thickness of Al and Ni foils is reduced down to less than 50 nm after fifty F&R cycles. Three-dimensional atom probe analyses clearly…
We investigate the influence of surfactants on stabilizing the formation of interfaces in non-local anisotropic two-phase fluid at equilibrium. The analysis focuses on singularly perturbed non-local van der Waals-Cahn-Hillard-type energies,…
Heterogeneous ice nucleation is one of the most common and important process in the physical environment. AgI has been proved to be an effective ice nucleating agent in the process of ice nucleation. However, the microscopic mechanism of…