Related papers: Nanolasers grown on silicon
Quantum-dot (QD) nanolasers integrated on a silicon photonic circuit are demonstrated for the first time. QD nanolasers based on one-dimensional photonic crystal nanocavities containing InAs/GaAs QDs are integrated on CMOS-processed silicon…
We review principles and trends in the use of semiconductor nanowires (NWs) as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as…
Artificial nanostructures with ultrafine and deep-subwavelength feature sizes have emerged as a paradigm-shifting platform to advanced light field management, becoming a key building block for high-performance integrated optoelectronics and…
Silicon photonics enables wafer-scale integration of optical functionalities on chip. A silicon-based laser frequency combs could significantly expand the applications of silicon photonics, by providing integrated sources of mutually…
In this work, we present the monolithic integration of GaAsP and GaInP islands, selectively grown on a CMOS-compatible Si nanotip wafer using gas-source molecular beam epitaxy via a nanoheteroepitaxy approach. These alloys span a wide…
Integrated photonics has profoundly impacted a wide range of technologies underpinning modern society. The ability to fabricate a complete optical system on a chip offers unrivalled scalability, weight, cost and power efficiency. Over the…
Nanoscale amplification of non-linear processes in solid-state devices opens novel applications in nano-electronics, nano-medicine or high energy conversion for example. Coupling few nano-joules laser energy at a nanometer scale for strong…
The concept of high refractive index subwavelength dielectric nanoresonators, supporting electric and magnetic optical resonances, is a promising platform for waveguiding, sensing, and nonlinear nanophotonic devices. However, high…
Featured with a plethora of electric and magnetic Mie resonances, high index dielectric nanostructures offer a versatile platform to concentrate light-matter interactions at the nanoscale. By integrating unique features of far-field…
Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with…
A key component for optical on-chip communication is an efficient light source. However, to enable low energy per bit communication and local integration with Si CMOS, devices need to be further scaled down. In this work, we fabricate…
Integrating nanophotonics with electronics promises revolutionary applications, from LiDAR to holographic displays. Although silicon photonics is maturing, realizing active nanophotonics in the ubiquitous bulk CMOS processes remains…
The future success of integrated circuits (IC) technology relies on the continuing miniaturization of the feature size, allowing more components per chip and higher speed. Extreme anisotropy opens new opportunities for spatial pattern…
Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly…
Nanocrystalline bulk materials are desirable for many applications as they combine mechanical strength and specific electronic transport properties. Our bottom up approach starts with tailored nanoparticles. Compaction and thermal treatment…
Quantum states of light play a pivotal role in modern science[1] and future photonic applications[2]. While impressive progress has been made in their generation and manipulation with high fidelities, the common table-top approach is…
All-optical integrated circuits for computing and information processing have been pursued for decades as a potential strategy to overcome the speed limitations intrinsic to electronics. However feasible on-chip integrated logic units and…
In this research, semiconductor-metallic hybrid nano-disk laser based on InGaAsP multi quantum wells (MQWs) or InGaAs bulk material membranes were designed, fabricated and characterized. The quality factors of surface-plasmon-polariton…
III-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate…
Active wavelength-scale optoelectronic components are widely used in photonic integrated circuitry, however coherent sources of light -- namely optical lasers -- remain the most challenging component to integrate. Semiconductor nanowire…