Related papers: Nanolasers grown on silicon
On-chip integrated light sources are essential for photonic integrated circuits, requiring waveguides to interface various components, from light sources to detectors. Two-dimensional (2D) transition metal dichalcogenide (TMD)…
3D printing of high-quality silica photonic structures is particularly challenging, as surface roughness at the nanoscale can severely degrade optical performance through scattering losses. Here, we develop a technique to fold ultrasmooth…
Large-area chemically synthesized single-crystal metals with nanometer-scale thickness have emerged as promising materials for on-chip nanophotonic applications, owing to their superior plasmonic properties compared to nanofabricated…
The heterogeneous integration of silicon with III-V materials provides a way to overcome silicon's limited optical properties toward a broad range of photonic applications. Hybrid modes are a promising way to make heterogeneous Si/III-V…
We observe growth of shape-controlled potassium nanoparticles inside a random network of glass nanopores, exposed to low-power laser radiation. Visible laser light plays a dual role: it increases the desorption probability of potassium…
In the last decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost.…
Photonic integrated circuits utilize planar waveguides to process light on a chip, encompassing functions like generation, routing, modulation, and detection. Similar to the advancements in the electronics industry, photonics research is…
The rapid development of metasurfaces - 2D ensembles of engineered nanostructures - is presently fostering a steady drive towards the miniaturization of many optical functionalities and devices to a subwavelength size. The material…
Spherical silicon nanoparticles with sizes of a few hundreds of nanometers represent a unique optical system. According to theoretical predictions based on Mie theory they can exhibit strong magnetic resonances in the visible spectral…
With the increasing need for large volumes of data processing, transport, and storage, optimizing the trade-off between high-speed and energy consumption in today's optoelectronic devices is getting increasingly difficult. Heterogeneous…
Semiconductor nanolasers based on micro disks, photonic crystal cavities, and metallo-dielectric nanocavities have been studied during the last decade for on-chip light source applications. However, practical realization of low threshold,…
Optoelectronic measurements of carbon nanotube transistors have shown a wide variety of sensitivites to the incident light. Direct photocurrent processes compete with a number of extrinsic mechanisms. Here we show that visible light…
One-dimensional (1D) nanostructures - nanowires (NWs) - exhibit promising properties for integration in different types of functional devices. Their properties can be enhanced even further or tuned for a specific application by combining…
The ability to integrate carbon nanotubes, especially single-walled carbon nanotubes, seamlessly onto silicon would expand the range of applications considerably. Though direct integration using chemical vapor deposition is the simplest…
Heterogeneous and monolithic integration of the versatile low loss silicon nitride platform with low temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses, has…
A scheme of nanoscale lasers based on the so-called carbon peapods is examined in details. Since there is considerable cylindrical empty space in the middle of a single-wall carbon nanotube (SWCNT), it can serve as a laser resonant cavity…
Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxation resulting from reduced dimensions. We explore this…
This work reports an original method for the fabrication of Metal-Isulator-Semiconductor (MIS) structures with silicon nanocrystals (Si NCs) based active layers embedded in the insulating SiO 2 oxide, for high performance solar cell and…
The semiconductor quantum dot nanopillar array in InAs/GaAs was fabricated. In consideration of the quantum dot density, the pillar diameter was determined as only a few quantum dots were involved in a pillar. The lattice constant of a…
The demonstration of enhanced spontaneous emission of nanoscaled optical emitters near metallic nanoparticles and the recent realization of a nanolaser based on surface plasmon amplification by stimulated emission of radiation (spaser)…