Related papers: Single-dopant resonance in a single-electron trans…
We evaluate the detector nonideality (and energy sensitivity) of a normal-state single-electron transistor (SET) in the cotunneling regime in a two-charge-state approximation. For small conductances and at zero temperature, the SET's…
We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate MOSFETs (metal-oxide-semiconductor field-effect transistors). The carrier…
We have analyzed numerically the response and noise-limited charge sensitivity of a radio-frequency single-electron transistor (RF-SET) in a non-superconducting state using the orthodox theory. In particular, we have studied the performance…
We charge an individual donor with electrons stored in a quantum dot in its proximity. A Silicon quantum device containing a single Arsenic donor and an electrostatic quantum dot in parallel is realized in a nanometric field effect…
The cuprates seem to exhibit statistics, dimensionality and phase transitions in novel ways. The nature of excitations [i.e. quasiparticle or collective], spin-charge separation, stripes [static and dynamics], inhomogeneities, psuedogap,…
Carbon nanotubes (CNTs) are nonlinear high-Q resonators with strong coupling to single-electron tunneling. We begin by describing several methods to detect the flexural motion of a CNT resonator. Next, we illustrate how single-electron…
We measure tunneling through a single quantum level in a carbon nanotube quantum dot connected to resistive metal leads. For the electrons tunneling to/from the nanotube, the leads serve as a dissipative environment, which suppresses the…
We investigate theoretically a mechanically assisted Kondo effect and electric charge shuttling in nanoelectromechanical single-electron transistor (NEM-SET). It is shown that the mechanical motion of the central island (a small metallic…
We analyse the quantum dynamics of a nanomechanical resonator coupled to a normal-state single-electron transistor (SET). Starting from a microscopic description of the system, we derive a master equation for the SET island charge and…
We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…
Substantial progress on field effect transistors "FETs" consisting of semiconducting single wall carbon nanotubes "s-SWNTs" without detectable traces of metallic nanotubes and impurities is reported. Nearly perfect removal of metallic…
Single donors in semiconductor nanostructures represent a key element to develop spin related quantum functionalities in atomic scale devices. Quantum transport through a single Arsenic donor in the channel of a Silicon nano-field effect…
The current noise spectrum of a single-electron transistor (SET) coupled to a nano-mechanical resonator is calculated in the classical regime. Correlations between the charge on the SET island and the position of the resonator give rise to…
We study a single-level quantum dot strongly coupled to a superconducting lead and tunnel-coupled to a normal electrode which can exchange energy with a single-mode resonator. We show that a such system can sustain lasing characterized by a…
We demonstrate the proof of principle for a ternary adder using silicon metal-on-insulator single electron transistors (SET). Gate dependent rectifying behavior of a single electron transistor results in a robust three-valued output as a…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
Nanoscale resonators that oscillate at high frequencies are useful in many measurement applications. We studied a high-quality mechanical resonator made from a suspended carbon nanotube driven into motion by applying a periodic radio…
Using a classical equation of motion, dynamics of the phase is analyzed in the Inductive Single-Electron Transistor (L-SET) which is a promising new system suitable for quantum measurement with ultimate sensitivity and low back-action. In a…
Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…