Related papers: Single-dopant resonance in a single-electron trans…

We investigate the behavior of a quantum resonator coupled to a superconducting single-electron transistor tuned to the Josephson quasiparticle resonance and show that the dynamics is similar in many ways to that found in a micromaser.…

We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET).…

Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon…

Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a Single Atom Transistor (SAT). By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at…

Based on the understanding that chemical bonds can act as tunnel junctions in the Coulomb blockade regime, and on the technical ability to coat a DNA strand with metal, we suggest that DNA can be used to built logical devices. We discuss…

We consider a model of a quantum-mechanical resonator capacitively coupled to a single electron transistor (SET). The tunnel current in the SET is modulated by the vibrations of the resonator, and thus the system operates as a displacement…

Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantum information processing [1-5] and single-dopant electronics…

We predict theoretically and observe in experiment that the differential conductance of a superconducting SET transistor exhibits a peak which is a complete analogue in a macroscopic system of a standard resonant tunneling peak associated…

We present topological insulator (TI)-based single-electron transistors (SETs) as magnetic-field-compatible charge sensing devices that are easily integrable with TI-superconductor hybrid platforms. We observe well-resolved Coulomb diamonds…

Using a time-dependent Anderson Hamiltonian, a quantum dot with an ac voltage applied to a nearby gate is investigated. A rich dependence of the linear response conductance on the external frequency and driving amplitude is demonstrated. At…

Semiconductor nano-devices have been scaled to the level that transport can be dominated by a single dopant atom. In the strong coupling case a Kondo effect is observed when one electron is bound to the atom. Here, we report on the spin as…

A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether. The proposed method can be useful for experimental study of charging effects in…

The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which…

Single-electron transistors (SETs) have been extensively used as charge sensors in many areas such as quantum computations. In general, the signals of SETs are smaller than those of complementary metal-oxide semiconductor (CMOS) devices,…

We study a superconducting single-charge transistor, where the coherence of Cooper pair tunneling is destroyed by the coupling to a tunable dissipative environment. Sequential tunneling and cotunneling processes are analyzed to construct…

Single-electron transistors have been proposed to be used as a read-out device for Cooper pair charge qubits. Here we show that a coupled superconducting transistor at a threshold voltage is much more effective in measuring the state of a…

Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on…

The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations. SETs have been proposed for read-out schema in solid-state quantum computing where…

Single Electron Transistors (SETs) are nanoscale electrometers of unprecedented sensitivity, and as such have been proposed as read-out devices in a number of quantum computer architectures. We show that the functionality of a standard SET…

Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and…