Related papers: Zero field spin polarization in a 2D paramagnetic …

We theoretically examine generation of spin-polarized current using multi-terminated quantum dot with spin-orbit interaction. First, a two-level quantum dot is analyzed as a minimal model, which is connected to $N$ ($\ge 2$) external leads…

A mesoscopic spin valve is used to determine the effective spin polarization of electrons tunneling from and into ferromagnetic transition metals at finite voltages. The tunneling spin polarization from the ferromagnet (FM) slowly decreases…

Planar macroscopic magnetic tunnel junctions exhibit well defined zero bias anomalies when a thin layer of ferromagnetic CoFe(B) nanodots is inserted within a MgO based tunnel barrier. The conductance curves exhibit a single and a double…

A key element in the emergence of a full spintronics technology is the development of voltage controlled spin filters to selectively inject carriers of desired spin into semiconductors. We previously demonstrated a prototype of such a…

We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data…

In this work we investigate the spin-dependent transport through a double quantum dot embedded in a ferromagnetic tunnel junction and side attached to a topological superconducting nanowire hosting Majorana zero-energy modes. We focus on…

Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such…

We present new results on quantum tunneling between deep potential wells, in the presence of a strong constant magnetic field. We construct a family of double well potentials containing examples for which the low-energy eigenvalue splitting…

Semiconductor point contacts can be a useful tool for producing spin-polarized currents in the presence of spin-orbit (SO) interaction. Neither magnetic fields nor magnetic materials are required. By numerical studies, we show that (i) the…

We derive boundary conditions for the electrically induced spin accumulation in a finite, disordered 2D semiconductor channel. While for DC electric fields these boundary conditions select spatially constant spin profiles equivalent to a…

We have experimentally studied the non-equilibrium transport in low-density clean 2D electron systems at mesoscopic length scales. At zero magnetic field (B), a double-peak structure in the non-linear conductance was observed close to the…

The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between…

We argue that the tunneling between two 2D electron gases in a weak magnetic field is of resonance character, and involves a long lifetime excitonic state of an electron and hole {\it uniformly spread} over cyclotron orbits. We find that…

Motivated by the recent experiments of Amasha {\it et al.} [Phys. Rev. B {\bf 78}, 041306(R) (2008)], we investigate single electron tunneling into an empty quantum dot in presence of a magnetic field. We numerically calculate the tunneling…

Magnetotunnelling spectroscopy of resonant tunnelling structures provides information on the nature of the two-dimensional electron gas in the well. We describe a model based on nonequilibrium Green's functions that allows for a…

The superconducting version of a diode effect has been the subject of extensive research in the past few years. So far, the focus has almost exclusively been on charge transport, but a natural question is whether it is possible to obtain…

A most fundamental and longstanding goal in spintronics is to electrically tune highly efficient spin injectors and detectors, preferably compatible with nanoscale electronics. Here, we demonstrate all these points using semiconductor…

We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the…

We investigate spin-polarized inter-band tunneling through measurement of (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to…

The conditions for a spontaneous spin polarization in a quantum wire positioned in a zero magnetic field are analyzed under weak population of one-dimensional subbands that gives rise to the efficient quenching of the kinetic energy by the…