Related papers: Giant Tunneling Electroresistance Effect Driven by…
We report on our theoretical study of the inverse TMR effect in the spin polarized transport through a narrow channel. In the weak tunneling limit, we find the ordinary positive TMR. The TMR changes its sign as the transmission probability…
My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…
We reveal the giant magnetoresistance induced by the spin-polarized current in the ferromagnet (F_1)/topological insulator (TI)/ferromagnet (F_2) junction, where two ferromagnets are deposited on the diffusive surface of the TI. We can…
Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have been investigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, and Al2O(3-x)). Junctions with a Ni counter electrode and an aluminium oxide barrier…
Magnetic tunnel junctions (MTJs), that consist of two ferromagnetic electrodes separated by an insulating barrier layer, have non-trivial fundamental properties associated with spin-dependent tunneling. Especially interesting are fully…
We study the effect of the domain wall on electronic transport properties in wire of ferromagnetic 3$d$ transition metals based on the linear response theory. We considered the exchange interaction between the conduction electron and the…
Direct tunneling in ferromagnetic junctions is compared with impurity-assisted, surface state assisted, and inelastic contributions to a tunneling magnetoresistance (TMR). Theoretically calculated direct tunneling in iron group systems…
We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and…
We report a strong effect of interface-induced magnetization on the transport properties of magnetic tunnel junctions consisting of ferromagnetic manganite La$_{0.7}$Ca$_{0.3}$MnO$_{3}$ and insulating cuprate PrBa$_{2}$Cu$_{3}$O$_{7}$.…
We have measured the transport properties of Ferromagnet - Superconductor nanostructures, where two superconducting aluminum (Al) electrodes are connected through two ferromagnetic iron (Fe) ellipsoids in parallel. We find that, below the…
We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the…
We show that pure spin injection from a magnetic electrode into an inversion symmetry-broken system composed of a tunnel barrier and a metallic region generates a transverse charge current. Such a tunnelling spin galvanic conversion is…
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage,…
Processes which flip the spin of an electron tunneling in a junction made up of magnetic electrodes are studied. It is found that: i) Magnetic impurities give a contribution which increases the resistance and lowers the magnetoresistance,…
A new mechanism different from the spin accumulation picture is proposed for the current induced magnetization switching in magnetic tunnel junctions by taking into account the effect of the electron electron interaction. We found in tunnel…
We investigate electric field effects in thin film microbridges of La$_{0.7}$Ca$_{0.3}$MnO$_3$ with the focus on the regime of metal-insulator transition. A mechanically milled SrTiO$_3$ substrate is used as a backgate dielectric. Inside…
We investigate the tunneling magnetoresistance in magnetic tunnel junctions (MTJs) comprised of Weyl semimetal contacts. We show that chirality-magnetization locking leads to a gigantic tunneling magnetoresistance ratio, an effect that does…
Phase separation naturally occurs in a variety of magnetic materials and it often has a major impact on both electric and magnetotransport properties. In resistive switching systems, phase separation can be created on demand by inducing…
Magnetic tunnel junctions with a ferrimagnetic barrier layer have been studied to understand the role of the barrier layer in the tunneling process - a factor that has been largely overlooked until recently. Epitaxial oxide junctions of…
A spin-tunnel-junction based on manganites, with La$_{1-x}$Sr$_x$MnO$_3$ (LSMO) as ferromagnetic metallic electrodes and the undoped parent compound LaMnO$_3$ (LMO) as insulating barrier, is here theoretically discussed using double…