English

Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier

Strongly Correlated Electrons 2009-11-13 v1

Abstract

A spin-tunnel-junction based on manganites, with La1x_{1-x}Srx_xMnO3_3 (LSMO) as ferromagnetic metallic electrodes and the undoped parent compound LaMnO3_3 (LMO) as insulating barrier, is here theoretically discussed using double exchange model Hamiltonians and numerical techniques. For an even number of LMO layers, the ground state is shown to have anti-parallel LSMO magnetic moments. This highly resistive, but fragile, state is easily destabilized by small magnetic fields, which orient the LSMO moments in the direction of the field. The magnetoresistance associated with this transition is very large, according to Monte Carlo and Density Matrix Renormalization Group studies. The influence of temperature, the case of an odd number of LMO layers, and the differences between LMO and SrTiO3_3 as barriers are also addressed. General trends are discussed.

Keywords

Cite

@article{arxiv.0802.0829,
  title  = {Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier},
  author = {S. Yunoki and E. Dagotto and S. Costamagna and J. A. Riera},
  journal= {arXiv preprint arXiv:0802.0829},
  year   = {2009}
}

Comments

14 pages, 18 figures