English

Spin-dependent tunneling through high-k LaAlO3

Materials Science 2009-11-11 v1 Mesoscale and Nanoscale Physics
Authors: V. Garcia , M. Bibes , J. -L. Maurice , E. Jacquet , K. Bouzehouane , J. -P. Contour , A. Barthelemy
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Abstract

We report on the use of the LaAlO3 (LAO) high-k dielectric as a tunnel barrier in magnetic tunnel junctions. From tunnel magnetoresistance (TMR) measurements on epitaxial La2/3Sr1/3MnO3/LAO/La2/3Sr1/3MnO3 junctions, we estimate a spin polarization of 77% at low temperature for the La2/3Sr1/3MnO3/LAO interface. Remarkably, the TMR of La2/3Sr1/3MnO3/LAO/Co junctions at low bias is negative, evidencing a negative spin polarization of Co at the interface with LAO, and its bias dependence is very similar to that of La2/3Sr1/3MnO3/STO/Co junctions. We discuss possible reasons for this behaviour.

Keywords

magnetic tunnel junctions oxide heterostructures

Cite

@article{arxiv.cond-mat/0507437,
  title  = {Spin-dependent tunneling through high-k LaAlO3},
  author = {V. Garcia and M. Bibes and J. -L. Maurice and E. Jacquet and K. Bouzehouane and J. -P. Contour and A. Barthelemy},
  journal= {arXiv preprint arXiv:cond-mat/0507437},
  year   = {2009}
}

Comments

14 pages, 3 figures

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