Related papers: Snake States in Graphene p-n Junctions

We study graphene which has both spin-orbit coupling (SOC), taken to be of the Kane-Mele form, and a Zeeman field induced due to proximity to a ferromagnetic material. We show that a zigzag interface of graphene having SOC with its pristine…

Recent experimental work on locally gated graphene layers resulting in p-n junctions have revealed quantum Hall effect in their transport behavior. We explain the observed conductance quantization which is fractional in the bipolar regime…

Graphene p-n junctions offer a potentially powerful approach towards controlling electron trajectories via collimation and focusing in ballistic solid-state devices. The ability of p-n junctions to control electron trajectories depends…

We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene mono-layer nearly 2 micrometers long. Measurements as…

To address the robustness of the transport gap induced by locally strained regions in graphene nanostructures, the effect of disorder and smoothness of the interface region is investigated within the Landauer-B\"uttiker formalism. The…

The ground state of a graphene sheet at charge neutrality in a perpendicular magnetic field remains enigmatic, with various experiments supporting canted antiferromagnetic, bond ordered, and even charge density wave phases. A promising…

The p-n junctions dynamics in graphene channel induced by stripe domains nucleation, motion and reversal in a ferroelectric substrate is explored using self-consistent approach based on Landau-Ginzburg-Devonshire phenomenology combined with…

Accessing intrinsic properties of a graphene device can be hindered by the influence of contact electrodes. Here, we capacitively couple graphene devices to superconducting resonant circuits and observe clear changes in the resonance-…

Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less…

Graphene has attracted much attention as one of promising candidates of future high-speed transistor materials because of its high carrier mobility of more than 10,000 cm2 V-1 s-1. Up to this point, we have focused on the contact properties…

Since the advent of graphene, a variety of studies have been performed to elucidate its fundamental physics, or to explore its practical applications. Gate-tunable resistance is one of the most important properties of graphene and has been…

We present measurements on side gated graphene constrictions of different geometries. We characterize the transport gap by its width in back gate voltage and compare this to an analysis based on Coulomb blockade measurements of localized…

We present the results of an experimental study of the interaction of quantized Landau level (LL) edge-states at the physical edge of graphene by using a graphene pn junction device with a ring-shaped geometry for the channel. The unique…

Graphitic nanostructures, e.g. carbon nanotubes (CNT) and graphene, have been proposed as ideal materials for spin conduction[1-7]; they have long electronic mean free paths[8] and small spin-orbit coupling[9], hence are expected to have…

Spatially inhomogeneous strains in graphene can simulate the effects of valley-dependent magnetic fields. As demonstrated in recent experiments, the realizable magnetic fields are large enough to give rise to well-defined flat pseudo-Landau…

We demonstrate the existence of localized states in close vicinity of a linear defect in graphene. These states have insulating or conducting character. Insulating states form a flat band, while conducting states present a slowdown of the…

Deformations in graphene systems are central elements in the novel field of {\it straintronics}. Various strain geometries have been proposed to produce specific properties but their experimental realization has been limited. Because…

We investigate the magnetic field dependence of the Hall and the bend resistances for a ballistic Hall bar structure containing a pn-junction sculptured from a bilayer of graphene. The electric response is obtained using the billiard model…

We investigate the electronic and transport properties of gated bilayer graphene with one corrugated layer, which results in a stacking AB/BA boundary. When a gate voltage is applied to one layer, topologically protected gap states appear…

By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…