Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less important and the resistance across the step is in quantitative agreement with predictions of Klein tunneling of Dirac fermions up to a small correction. We also perform magnetoresistance measurements at low magnetic fields and compare them to recent predictions.
@article{arxiv.0806.2319,
title = {Evidence of Klein tunneling in graphene p-n junctions},
author = {N. Stander and B. Huard and D. Goldhaber-Gordon},
journal= {arXiv preprint arXiv:0806.2319},
year = {2009}
}
Comments
Major changes made: 1) Taking into account properly the contribution of the resistance of monopolar junctions to the odd part of the resistance. To better present the results we use a fitting parameter for the amplitude of screening in graphene. 2) Wrong data for the diffusive model in figures 3, 9 and 10 was plotted in former version. 3) Figure 5 moved to EPAPS