Bilayer graphene Hall bar with a pn-junction
Abstract
We investigate the magnetic field dependence of the Hall and the bend resistances for a ballistic Hall bar structure containing a pn-junction sculptured from a bilayer of graphene. The electric response is obtained using the billiard model and we investigate the cases of bilayer graphene with and without a band gap. Two different conduction regimes are possible: ) both sides of the junction have the same carrier type, and ) one side of the junction is n-type while the other one is p-type. The first case shows Hall plateau-like features in the Hall resistance that fade away as the band gap opens. The second case exhibits a bend resistance that is asymmetric in magnetic field as a consequence of snake states along the pn-interface, where the maximum is shifted away from zero magnetic field.
Keywords
Cite
@article{arxiv.1312.1164,
title = {Bilayer graphene Hall bar with a pn-junction},
author = {S. P. Milovanovic and M. Ramezani Masir and F. M. Peeters},
journal= {arXiv preprint arXiv:1312.1164},
year = {2013}
}