Related papers: Voltage controlled spin precession in InAs quantum…
Magnetic focussing of charge carriers in two-dimensional systems provides a solid state version of a mass spectrometer. In the presence of a spin-orbit interaction, the first focussing peak splits into two spin dependent peaks, allowing…
We revisit the spin-injected field effect transistor (spin-FET) by simulating a lattice model based on recursive lattice Green's function approach. In the one-dimensional case and coherent regime, the simulated results reveal noticeable…
We have investigated the effect of the gate voltage on spin relaxation in an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As heterostructure. The study is motivated by a recent proposal for a non-ballistic spin field effect transistor that utilizes the…
The spin-orbit interaction and spin-relaxation mechanisms of a shallow InAs quantum well heterostructure are investigated by magnetoconductance measurements as a function of an applied top-gate voltage. The data were fit using the…
We analyze the spin expectation values for injected spin-polarized electrons (spin vectors) in a [001]-grown Rashba-Dresselhaus two-dimensional electron gas (2DEG). We generalize the calculation for point spin injection in semi-infinite…
We report theoretical and experimental studies of ambipolar spin diffusion in a semiconductor. A circularly polarized laser pulse is used to excite spin-polarized carriers in a GaAs multiple quantum well sample at 80 K. Diffusion of…
The kinetics of the extrinsic spin Hall conductivity induced by the skew scattering is performed from the fully microscopic kinetic spin Bloch equation approach in $(001)$ GaAs symmetric quantum well. In the steady state, the extrinsic spin…
The effective linear coupling coefficient and the total spin-splitting are calculated in Ga- and N- face InGaN quantum wells. Alloy content, geometry, and gate voltage affect an internal field and an electron density distribution in the…
An analytical expression is derived for the conductance modulation of a ballistic two dimensional Datta-Das Spin Field Effect Transistor (SPINFET) as a function of gate voltage. Using this expression, we show that the recently observed…
The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are applied to determine the relative strengths of Rashba and Dresselhaus band spin-splitting in (001)-grown GaAs and InAs based two dimensional…
We study the dynamical dielectric function of a two-dimensional hole gas, exemplified on [001]-GaAs and InAs quantum wells, within the Luttinger model extended to the two lowest subbands including bulk and structure inversion asymmetric…
Multi-subband effect on spin precession and spin dephasing in $n$-type GaAs quantum wells is studied with electron-electron and electron-phonon scattering explicitly included. The effects of temperature, well width and applied electric…
Spin-orbit splitting of conduction band in HgTe quantum wells was studied experimentally. In order to recognize the role of different mechanisms, we carried out detailed measurements of the Shubnikov-de Haas oscillations in gated structures…
Spin-dependent electrical injection has found useful applications in storage devices, but fully operational spin-dependent semiconductor electronics remain a challenging task because of weak spin-orbit couplings and/or strong spin…
By studying the time and spatial evolution of a pulse of the spin polarization in $n$-type semiconductor quantum wells, we highlight the importance of the off-diagonal spin coherence in spin diffusion and transport. Spin oscillations and…
We consider a two-channel spin transistor with weak spin-orbit induced interband coupling. We show that the coherent transfer of carriers between the coupled channels gives rise to an \textit{additional} spin rotation. We calculate the…
InAs quantum well heterostructures are of considerable interest for mesoscopic device applications such as scanning probe and magnetic recording sensors, which require the channel to be close to the surface. Here we report on…
In semiconductors with inversion asymmetry, spin-orbit coupling gives rise to the well-known Dresselhaus and Rashba effects. If one considers quantum wells with two or more conduction subbands, an additional, intersubband-induced spin-orbit…
Increasing the spin-orbit coupling in InGaAs quantum wells is desirable for applications involving spintronics and topological quantum computing. Digital alloying is an approach towards growing ternary quantum wells that enables asymmetric…
We discuss the transport properties of a quantum spin-Hall insulator with sizable Rashba spin-orbit coupling in a disk geometry. The presence of topologically protected helical edge states allows for the control and manipulation of spin…