Related papers: A nanoscale transistor based on gate-induced stoch…
We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmon-like device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a…
In this article, we first point out a missing active-device while providing its theoretical definition and impact on electronics. This type of active devices has an inverse functionality of transistors, and is suggested to be called…
Hysteresis in the current-voltage characteristic in a superconducting nanowire reflects an underlying bistability. As the current is ramped up repeatedly, the state switches from a superconductive to a resistive one, doing so at random…
We present transport measurements in superconductor-nanowire devices with a gated constriction forming a quantum point contact. Zero-bias features in tunneling spectroscopy appear at finite magnetic fields, and oscillate in amplitude and…
We report on the fabrication and measurement of nanoscale devices based on bilayer graphene sandwiched between hexagonal boron nitride bottom and top gate dielectrics. The top gates are patterned such that constrictions and islands can be…
We present the effect of temperature on the switching characteristics of a bistable nonlinear nanomechanical beam. At MHz-range frequencies, we find that it is possible to controllably change the state of the system between two stable…
The functionality of logic and memory elements in current electronics is based on multi-stability, driven either by manipulating local concentrations of electrons in transistors, or by switching between equivalent states of a material with…
Using a one-dimensional tight-binding Anderson model, we study a disordered nanowire in the presence of an external gate which can be used for depleting its carrier density (field effect transistor device configuration). In this first…
Electronic devices that work in the quantum regime often employ hybrid nanostructures to bring about a nonlinear behaviour. The nonlinearity that these can provide has proven to be useful, in particular, for applications in quantum…
We report on the fabrication and electrical transport properties of gate-tunable superconducting quantum interference devices (SQUIDs), made of semiconducting PbS nanowire contacted with PbIn superconducting electrodes. Applied with a…
Quantum correlation and hot-carrier transport represent two fundamentally distinct regimes of electronic conduction, rarely accessible within the same device. Here, we report a state-of-the-art monolayer transition metal dichalcogenides…
Thermal transistor is an efficient heat control device which can act as a heat switch as well as a heat modulator. In this paper, we study systematically one-dimensional and two-dimensional thermal transistors. In particular, we show how to…
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…
Bestriding the realms of classical and quantum mechanics, nanomechanical structures offer great promise for a huge variety of applications, from computer memory elements \cite{badzey04} and ultra-fast sensors to quantum computing.…
We report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional…
In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) architecture. Novel process technology enabling the transition from…
Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this…
Nanofluidic ionic transistors typically require gate voltages above 1 V and operate only at sub millimolar ionic strengths, limiting their biocompatible applications. We demonstrate ionic transistors consisting of single sub 10 nm nanopores…
We demonstrate the ability of an epitaxial semiconductor-superconductor nanowire to serve as a field-effect switch to tune a superconducting cavity. Two superconducting gatemon qubits are coupled to the cavity, which acts as a quantum bus.…
It was recently demonstrated the possibility to tune, through the application of a control gate voltage, the superconducting properties of mesoscopic devices based on Bardeen-Cooper-Schrieffer metals. In spite of the several experimental…