Related papers: A nanoscale transistor based on gate-induced stoch…
In a family of experiments carried on all-metallic supercurrent nano-transistors a surprising gating effect has been recently shown. These include the full suppression of the critical supercurrent, the increase of quasiparticle population,…
Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of conducting…
The intermediate transport regime in nanoscale transistors between the fully ballistic case and the quasi equilibrium case described by the drift-diffusion model is still an open modeling issue. Analytical approaches to the problem have…
Properties of one-dimensional superconducting wires depend on physical processes with different characteristic lengths. To identify the process dominant in the critical regime we have studied trans- port properties of very narrow (9-20 nm)…
Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with…
The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to…
Magnetic analogue of electronic gates are advantageous in many ways. There is no electron leakage, higher switching speed and more energy saving in a magnetic logic device compared to a semiconductor one. Recently, we proposed a magnetic…
Magnon transistors that can effectively regulate magnon transport by an electric field are desired for magnonics which aims to provide a Joule-heating free alternative to the conventional electronics owing to the electric neutrality of…
We use the strongly temperature-dependent ionic mobility in polymer electrolytes to 'freeze in' specific ionic charge environments around a nanowire using a local wrap-gate geometry. This enables us to set both the threshold voltage for a…
Many strongly correlated electronic materials, including high-temperature superconductors, colossal magnetoresistance and metal-insulator-transition (MIT) materials, are inhomogeneous on a microscopic scale as a result of domain structure…
Gate capacitances of back-gated nanowire field-effect transistors (NW-FETs) are calculated by means of finite element methods and the results are compared with analytical results of the ``metallic cylinder on an infinite metal plate…
We report on the successful synthesis and low-temperature electron transport investigations of a new form of material - Bi2O2Se semiconducting nanowires. Gate-tunable 0- and $\pi$-h/e (h is the Planck constant and e the elementary charge)…
Single Electron Transistors (SETs) are nanoscale electrometers of unprecedented sensitivity, and as such have been proposed as read-out devices in a number of quantum computer architectures. We show that the functionality of a standard SET…
Low-temperature experiments are performed on novel nanoscale nonlinear devices (ballistic rectifiers) as well as nano-structured artificial materials, fabricated from an InP/InGaAs quantum well wafer. A DC output is generated between the…
We show how nanostructuring of a metallic gate on a field-effect transistor (FET) can lead to a macroscopic, robust and voltage controlled quantum state in the electron channel of a FET. A chain of triple quantum dot molecules created by…
A low-temperature intervening metallic regime arising in the two-dimensional superconductor-insulator transition challenges our understanding of electronic fluids. Here we develop a gauge theory revealing that this emergent anomalous metal…
Experimental studies of magnetoresistance in thin superconducting strips subject to a perpendicular magnetic field B exhibit a multitude of transitions, from superconductor to insulator and vice versa alternately. Motivated by this…
We propose a transistor-like circuit including two serially connected segments of a narrow superconducting nanowire joint by a wider segment with a capacitively coupled gate in between. This circuit is made of amorphous NbSi film and…
Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit…
We report on a variety of quantum transport experiments in SnTe nanowire devices. Research on these particular nanowire devices is relevant because of their topological properties and their potential to distinguish surface states owing to…