Related papers: A nanoscale transistor based on gate-induced stoch…
Electrostatic gating is essential for defining and control of semiconducting devices. However, nano-fabrication processes required for depositing gates inevitably degrade the pristine quality of the material of interest. Examples of…
Inspired by recent experimental realizations and theoretical simulations of thin silicon nanowire-based devices, we perform predictive first-principles simulations of junctionless gated Si nanowire transistors. Our primary predictions are…
The oscillatory response of nonlinear systems exhibits characteristic phenomena such as multistability, discontinuous jumps and hysteresis. These can be utilized in applications leading, e.g., to precise frequency measurement, mixing,…
Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling properties, which become fundamental to sustain the scaling in…
For carbon nanotube transistors, as for graphene, the electrical contacts are a key factor limiting device performance. We calculate the device characteristics as a function of nanotube diameter and metal workfunction. Although the on-state…
We analyze the quantum information processing capability of a superconducting transmon circuit used to mediate interactions between quantum information stored in a collection of phononic crystal cavity resonators. Having only a single…
Nonreciprocal devices, such as isolator or circulator, are crucial for information routing and processing in quantum networks. Traditional nonreciprocal devices, which rely on the application of bias magnetic fields to break time-reversal…
In our previous papers on ballistic quantum transport in nano-transistors [J. Appl. Phys. 98, 84308 (2005)] it was demonstrated that under certain conditions it is possible to reduce the three-dimensional transport problem to an effectively…
The basis for superconducting electronics can broadly be divided between two technologies: the Josephson junction and the superconducting nanowire. While the Josephson junction (JJ) remains the dominant technology due to its high speed and…
We analyze the benefits and shortcomings of a thermal control in nanoscale electronic conductors by means of the contact heating scheme. Ideally, this straightforward approach allows one to apply a known thermal bias across nanostructures…
We demonstrate that it is possible to distinguish two conductance switching mechanisms in silver sulfide devices at room temperature. Experiments were performed using a Ag$_2$S thin film deposited on a wide Ag bottom electrode, which was…
We report on the first model of a thermal transistor to control heat flow. Like its electronic counterpart, our thermal transistor is a three-terminal device with the important feature that the current through the two terminals can be…
We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides. The device is intrinsically thinner…
Vanadium dioxide (VO2) exhibits a hysteretic insulator-to-metal transition near room temperature, forming the foundation for various forms of resistive switching devices. Usually, these are realized in the form of two-terminal bridge-like…
A vertical transistor based on a double gated, atomically thin heterojunction is theoretically examined. Both p-type and n-type transistor operations can be conveniently achieved by using one of the two gates as the switching gate. The…
We demonstrate a tunnel field effect transistor based on a lateral heterostructure patterned from an $\mathrm{LaAlO_3/SrTiO_3}$ electron gas. Charge is injected by tunneling from the $\mathrm{LaAlO_3}$/$\mathrm{SrTiO_3}$ contacts and the…
In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…
We analyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semiclassical, ballistic transport model and an sp3s*d5 tight-binding treatment of the electronic structure. Comparison of the measured…
Recently, short channel effects (SCE) and power consumption dissipation problems pose big challenges which need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters…
We report the detection of a gate-tunable kinetic inductance in a hybrid InAs/Al nanowire. For this purpose, we have embedded the nanowire into a quarter-wave coplanar waveguide resonator and measured the resonance frequency of the circuit.…